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Package structure of semiconductor power device and electrodes of package structure

A technology of power devices and packaging structures, which is applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., and can solve problems such as increasing power density, increasing device packaging size, and disadvantages

Active Publication Date: 2019-03-08
GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, both of these methods will increase the size of the device package, which is not conducive to improving the power density.

Method used

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  • Package structure of semiconductor power device and electrodes of package structure
  • Package structure of semiconductor power device and electrodes of package structure
  • Package structure of semiconductor power device and electrodes of package structure

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Embodiment Construction

[0018] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, not all of them. the embodiment. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0019] Due to the mutual inductance between all electrodes, the current presents a distribution that is large on the outside and small on the center, similar to the skin effect; and because the resistance of the electrodes is the same, the current distribution is mainly affected by the skin effect. The object of the present invention is to provide an electrode, which is used in the p...

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Abstract

The invention discloses a package structure of a semiconductor power device and electrodes of the package structure. The electrodes at an interior of the package structure are improved, and the electrodes are designed in a manner that the resistance of the electrodes decreases gradually from inside to outside. Because of the mutual inductance between all of the electrodes, the current is high at the outside and low at the center and is distributed similar to the skin effect; and since the resistance of the electrodes is the same, the current distribution is mainly affected by the skin effect.The resistance of the electrodes increases from inside to outside, thus the influence of the skin effect is weakened so that the currents of the electrodes tend to be uniform. In the electrode manufacturing stage, the size of the electrodes is changed, whereas the electrode distribution and the size of a package structure are not changed, thus the device size is not influenced, and the current sharing of multiple semiconductor power devices can be well implemented without increasing the package size.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a package structure of a semiconductor power device and an electrode of the package structure. Background technique [0002] In high-power power electronics applications, crimp-type semiconductor power devices are widely used due to the advantages of multi-chip parallel connection, failure short circuit, and easy series connection. [0003] When the device is turned on, the current flowing through each IGBT chip in the crimping type semiconductor power device, such as the IGBT device, is different due to the influence of the inductance and mutual inductance of the boss of the branch where it is located. This will inevitably lead to differences in the performance of different chips under long-term working conditions, which will affect the long-term service life. Therefore, it is necessary to design the packaging structure to ensure that the inductance parameters of the bra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/495H01L23/31
CPCH01L23/31H01L23/49534
Inventor 唐新灵赛朝阳张朋林仲康王亮
Owner GLOBAL ENERGY INTERCONNECTION RES INST CO LTD
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