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Light-emitting display device, etching method thereof, and display device

A technology to be etched and photoresist, applied in the direction of electrical solid device, semiconductor device, semiconductor/solid state device manufacturing, etc., can solve the decline of the electrical performance of the metal film layer, the decline of the film quality, and the impact on the yield and reliability of the device. and other problems, to enhance the effect of physical etching, reduce foreign matter, and enhance the effect of physical etching

Active Publication Date: 2020-08-25
YUNGU GUAN TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] When the existing chlorine-based gas is used to etch the metal layer in the OLED display device, the electrical properties of the metal film layer will decrease, and the quality of the subsequent film formation will decrease, which will seriously affect the yield and reliability of the device.

Method used

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  • Light-emitting display device, etching method thereof, and display device
  • Light-emitting display device, etching method thereof, and display device
  • Light-emitting display device, etching method thereof, and display device

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Embodiment Construction

[0029] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts fall within the protection scope of the present invention.

[0030] When etching the Al and Ti metal layers in OLED display devices, chlorine-based etching gas is used for etching. The process conditions usually used are the flow rate of chlorine gas is 70sccm-80sccm, the etching pressure is 8mTorr, and the RF power supply The power is 800W, the power of the bias power is 140W, the temperature is 60°C, and the photores...

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Abstract

The invention discloses a light-emitting display device, an etching method thereof, and a display device, wherein the method includes: coating a photoresist on a metal film layer to be etched, exposing and developing; layer is etched; the preset etching conditions include: the etching gas includes boron trichloride with a flow rate greater than 60 sccm, the etching gas includes argon, and the power of the bias power supply is greater than or equal to at least one of 300W. Eclipse conditions. The above etching conditions can enhance physical etching, and enhanced physical etching can more effectively remove the etching by-products that grow on the etching sidewall after the reaction of chlorine and metal, so as to facilitate the filling of subsequent film layers and improve the electrical conductivity of the metal film layer. Performance and film quality of subsequent film layers, thereby improving product yield and reliability. The removal of sidewall by-products of the metal film layer can be further enhanced.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a light-emitting display device, an etching method thereof, and a display device. Background technique [0002] In the traditional OLED display field, chlorine-based gases are usually used to etch metal layers such as aluminum (Al) and titanium (Ti) in OLED display devices to achieve better etching effects. With the continuous emergence of new technologies and new layouts, the graphic density of products is gradually increasing, and the shape of lines is gradually becoming more and more complicated. [0003] When the existing chlorine-based gas is used to etch the metal layer in the OLED display device, the electrical properties of the metal film layer will decrease, and the quality of the subsequent film formation will decrease, seriously affecting the yield and reliability of the device. Contents of the invention [0004] In view of this, embodiments of the present inventio...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/308H01L51/56C23F1/12C23F1/02
CPCC23F1/02C23F1/12H10K71/00
Inventor 崔志远
Owner YUNGU GUAN TECH CO LTD
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