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A kind of ultra-low-power memory device and data storage method based on molecular spin state

A technology for data storage and storage devices, applied in the field of ultra-low power storage devices, can solve the problems of high voltage and high energy consumption, achieve stable storage, stable spin state, and ultra-low power consumption

Active Publication Date: 2021-07-30
北京大学(天津滨海)新一代信息技术研究院
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, for tin phthalocyanine molecules, the voltage used for the different state transitions of Sn is high, and the energy consumption required for making devices is high

Method used

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  • A kind of ultra-low-power memory device and data storage method based on molecular spin state
  • A kind of ultra-low-power memory device and data storage method based on molecular spin state
  • A kind of ultra-low-power memory device and data storage method based on molecular spin state

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] The surface of Au (111) having a single atom scale is obtained by multi-wheel argon ion bombardment and annealing of the gold monocytine surface as the base. The phthalocyanine molecule was placed in ultra-high vacuum, evaporated from the self-made tantalum to the Au (111) substrate located at room temperature. After the phthalocyanine chloride molecule is deposited to form a phthalocyanine molecular layer on the surface of the matrix, the probe is provided at the upper portion of the molecular layer to form a memory device.

Embodiment 2

[0033] On the basis of Example 1, if figure 2 As shown, a platinum ruthenium is used near the phthalocyanine chloride molecule, and the molecules are scanned in a plane parallel to the conductive substrate, and the transverse manipulation means placing the needle tip by scanning a plane parallel to the conductive substrate. At the beginning of the molecule, the termination position of the needle tip is then selective, and the molecules are connected to the two-point connection, and as the movement of the tip is moved, the molecule is moved to the surface of the matrix on the surface of the substrate, so that The configuration of the crystal molecule changes significantly, that is, the molecular center can achieve reversible control variations of the molecule darken or darken by dark shifts. like figure 2In the middle A, in the dark molecular configuration, the center of the molecule is lower than the four weeks; figure 2 As shown in Central B, a bright molecular configuration, the...

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Abstract

The invention relates to an ultra-low power consumption storage device based on molecular spin states. The storage device includes a substrate, a data storage medium and a probe; the substrate is a conductive substrate; the data storage medium is a spin state variable organic Molecular layer, the molecules in the spin state variable molecular layer are regularly arranged on the surface of the conductive substrate; the probe is used to write data into the data storage medium and / or read the data stored in the data storage medium; the writing The operation includes changing the spin state of molecules in the spin state variable molecular layer, and the reading operation includes detecting the spin state of the molecules in the spin state variable molecular layer; the spin state variable organic molecule is phthalein Chlorocyanine molecule. The present invention uses ferric phthalocyanine molecules, which are easy to realize the transformation of different spin states, as the storage medium, and can easily control the transformation of different spin states by using the lateral manipulation technology under low voltage and low current conditions, and realizes the ultra-high performance of the device. low power consumption.

Description

Technical field [0001] The present invention belongs to the technical field of memory devices; specific relatively low power storage devices. Background technique [0002] The power consumption of the electronic device is generally referred to as the working voltage and working current required for the operation of the electronic component. With the gradual reduction of the integrated circuit process, the increase in chip speed and the size of the size are getting bigger and larger. The increase in power will first increase the energy consumption, and also cause the temperature of the chip to rise, which will reduce the work stability of the chip or even the entire system. In order to increase the work stability, more complex chip package technology and cooling technology are required. This increases the cost of the entire system. [0003] It is of great significance to the low power consumption of electronic devices from energy saving and control devices. Existing low-power cons...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/16
CPCG11C11/161G11C11/1673G11C11/1675
Inventor 袁晨阳张亚杰李若宁李娜侯士敏王永锋
Owner 北京大学(天津滨海)新一代信息技术研究院
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