Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Improved Defective Structure Low-Pass Filter

A defected structure, low-pass filter technology, applied in the microwave field, can solve the problems of complex modeling design and processing, difficult miniaturization, unstable performance of microwave devices, etc., achieve simple structure, improve high-impedance frequency width, convenient Effects of Electromagnetic Field Theoretical Analysis and Equivalent Circuit Modeling Analysis

Active Publication Date: 2020-06-16
GUIZHOU UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The EBG structure needs to be loaded with a periodic structure, the modeling design and processing are more complicated, and it is not easy to miniaturize
Moreover, the band-stop characteristic parameters of the EBG structure are easily affected by various conditions, so the performance of microwave devices with the EBG structure is also unstable.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Improved Defective Structure Low-Pass Filter
  • Improved Defective Structure Low-Pass Filter
  • Improved Defective Structure Low-Pass Filter

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] Embodiment of the present invention: an improved low-pass filter with a defective ground structure, including a dielectric substrate 1, a step impedance unit structure 2 is arranged on the upper surface of the dielectric substrate 1, and each side of the step impedance unit structure 2 has two stages, each The step impedance unit structure 2 is composed of a rectangular structure part 2-1 and a hexagonal structure part 2-2, and the rectangular structure part and the hexagonal structure part of each step impedance unit structure 2 meet the impedance ratio requirement during design, And the step impedance unit structure 2 is connected to the transmission line through its rectangular structure part 2-1; a metal ground layer 3 is provided on the lower surface of the dielectric substrate 1, and a groove is designed in the middle area of ​​the metal ground layer 3 to form a defective ground structure 4. The defect structure 4 consists of a longitudinal rectangular groove and t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an improved defective ground structure low-pass filter. The invention adopts a special two-step impedance structural unit, which adopts a structural mode of narrow rectangularconnection hexagonal structural unit, can shorten the length of the step impedance structural unit without reducing the load Q, has great degree of freedom in structure and design, and is easy to realize miniaturization of microwave device. In addition, the invention optimizes the defect ground structure of the bottom and changes the effective dielectric constant distribution of the substrate material, thereby affecting the current distribution of the ground plane and the transmission characteristics of the microstrip transmission line. Such a defective structure of the invention improves thelow-pass filtering characteristics of the low-pass filter by increasing the high impedance frequency width and the out-of-band rejection strength of the low-pass filter. Moreover, this kind of defectground structure, the structure is relatively simple, easy to electromagnetic field theory analysis and equivalent circuit modeling analysis, more suitable for the practical application of integratedcircuits advantages.

Description

technical field [0001] The invention belongs to the field of microwave technology, in particular to a low-pass filter with a defective structure. Background technique [0002] With the development of modern communication technology, the market has higher and higher requirements for the efficiency and anti-interference of communication equipment, which also leads to the research of high-performance microwave devices. The low-pass filter can suppress harmonic signals and interference signals, and provide a suitable working bandwidth for the communication system. The traditional low-pass filter has a large structure size, poor selectivity, and weak out-of-band suppression ability, so it is difficult to suppress interference signals and high-order harmonic signals. Through research in recent years, a series of new types of photonic bandgap structures (PBG, Photonic Bandgap), step impedance cascaded structures, adjustable filter structures, and electromagnetic bandgap structures...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01P1/203
CPCH01P1/203
Inventor 黄鹏李良荣金海焱黄永茂
Owner GUIZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products