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Protection and control method of IGBT

A technology of protection control and threshold, applied in the direction of emergency protection circuit devices, electrical components, etc., can solve the problems of complex accurate calculation, time-consuming and labor-intensive problems

Active Publication Date: 2019-01-11
SICHUAN CHANGHONG ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is complicated and time-consuming to calculate the power consumption accurately. In actual work, approximate estimation can be used to obtain

Method used

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  • Protection and control method of IGBT

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Experimental program
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Effect test

Embodiment 1

[0046] Embodiment 1 provides a protection and control method for IGBTs, which performs overcurrent, overvoltage and overtemperature on the IGBT (600V, 50A) used in the internal DC-DC boost circuit of a certain single-phase off-grid 3KW photovoltaic inverter product. Monitoring, the main control chip uses a 32bit microcontroller of a certain brand, which specifically includes the following steps:

[0047] Step 1: Set the bus voltage threshold V bth Set to 450V, the IGBT gate drive voltage threshold V gth Set to 5.25V, the collector operating current first threshold I cth_1 Set it to 18.00A, which is about 1.5 times the rated current value, and set the collector operating current to the second threshold I cth_2 set to 30.00A, about 2 times the rated current value, the T igbt_th Set to 120°C;

[0048] Step 2: Collect the working parameters of the IGBT in the current IGBT application system through the voltage, current, and temperature acquisition unit, and obtain the current ...

Embodiment 2

[0056] Embodiment 2 provides a kind of protection control method of IGBT, and the IGBT (600V, 50A) used in the upper bridge of the DC-AC inverter full bridge circuit in the inverter is monitored for overcurrent, overvoltage, overtemperature and power consumption, The specific methods and steps are as follows:

[0057] Step 1: Set the bus voltage threshold V bth Set to 450V, the IGBT gate drive voltage threshold V gth Set to 5.25V, the collector operating current first threshold I cth_1 Set it to 18.00A, which is about 1.5 times the rated current value, and set the collector operating current to the second threshold I cth_2 set to 30.00A, about 2 times the rated current value, the T igbt_th Set to 120°C, switching energy consumption E ts is 2.6mJ, the current switching frequency is 22Khz, and the conduction nominal current I n is 15A, the power consumption estimation coefficient K is 1.385, and the power consumption threshold P th It is 310W, n and m are set to 10;

[00...

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Abstract

The invention relates to the field of an insulated gate bipolar transistor, and discloses a protection and control method of an IGBT, which is used for over-current and over-voltage protection of an IGBT in an IGBT application system. At first, accord to that parameter table of the IGBT manufacture and the actual working condition requirement, the invention sets the threshold parameters of the IGBT in the software, then collects the work parameters of the IGBT in the current IGBT application system, and finally executes the over-current protection judgment and the over-voltage protection judgment based on the set threshold parameters and the collected work parameters. The invention is applicable to the protection and control of an IGBT in an inverter system.

Description

technical field [0001] The invention relates to the field of insulated gate bipolar transistors (IGBT), in particular to a protection and control method for the IGBT. Background technique [0002] IGBT power tubes play the role of energy transmission and power conversion in converter systems such as inverters, frequency converters, motor drives, lighting systems, etc., and are widely used in new energy vehicles, high-speed rail, solar energy, and wind power products. It is one of the most expensive and critical components of the system. [0003] Since the electrical characteristics of the IGBT are very sensitive to the device voltage, current and temperature, a slight excess may cause breakdown and cannot be repaired. Therefore, IGBT is the key monitoring object in the system, and effective measures must be taken to protect it. [0004] In the inverter system, IGBT failure types include overvoltage, overcurrent, and overheating. Overvoltage refers to the high voltage of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02H7/12
CPCH02H7/1203
Inventor 李珣李健黄勇黄诚肖宇徐迟
Owner SICHUAN CHANGHONG ELECTRIC CO LTD
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