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A light detector with adjustable height base on Schottky barrier

A technology of Schottky potential and photodetector, applied in the field of photodetector

Inactive Publication Date: 2019-01-08
中山科立特光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of the above problems, the purpose of the present invention is to solve the problem that existing photothermal detectors based on Schottky barriers cannot autonomously change the frequency band of light that can be detected

Method used

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  • A light detector with adjustable height base on Schottky barrier
  • A light detector with adjustable height base on Schottky barrier
  • A light detector with adjustable height base on Schottky barrier

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Embodiment 1

[0026] In order to solve the problem that the existing photothermal detectors based on the Schottky barrier cannot autonomously change the frequency band of the light that can be detected. The present invention provides a figure 1 The shown photodetector based on the adjustable Schottky barrier height includes a substrate layer 1, which mainly plays a supporting role, and the substrate layer 1 can be made of silicon dioxide, quartz, glass, etc.; The top of the substrate layer 1 is provided with a first electrode layer 2, the top of the first electrode layer 2 is provided with an organic material 3, the upper surface of the organic material 3 is also covered with a second electrode layer 4, the lower part of the organic material 3 A through hole 5 parallel to the extension direction of the first electrode layer 2 is provided close to the first electrode 2, and an electrothermal material 6 is arranged in the through hole 5, and the two ends of the electrothermal material 6 are r...

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Abstract

A Schottky barry height adjustable optical detector include a substrate layer, A first electrode layer is disposed above the substrate layer, An organic material is arranged above the first electrodelayer, an upper surface of the organic material is also covered with a second electrode layer, and a through hole of the organic material is arranged near the first electrode, which is parallel to theextending direction of the first electrode layer, and an electrothermal material is arranged in the through hole, and both ends of the electrothermal material are respectively connected with positiveand negative electrodes of an external control power supply; Which is based on a Schottky barrier height adjustable photodetector, As that electrothermal material is arrange in the organic material,and an external electrode is loaded on the electrothermal material, The heating efficiency of the electrothermal material is controlled by adjusting the voltage / current across the electrothermal material so as to change the carrier distribution in the whole organic material, so that the resonance frequency of the photodetector for the detected incident light is changed, and the purpose of adjusting the resonance frequency of the incident light is achieved.

Description

technical field [0001] The invention relates to the technical field of photodetectors, in particular to a photodetector based on a Schottky barrier height adjustable. Background technique [0002] The physical effects of photodetectors are usually divided into photon effects and photothermal effects, and the corresponding detectors are called photon detectors and photothermal detectors, respectively. The common feature of various photon-type detectors is the use of semiconductor energy band materials. The photon energy has a direct effect on the generation of photoelectrons in the detection material. Therefore, photon-type detectors have a cut-off response frequency or wavelength, and the spectral response is limited to a certain band. Therefore Different material systems determine that detectors have different response wavelength ranges, which are generally difficult to use for wide-spectrum or multi-spectrum detection. For the photothermal detector, after absorbing the li...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/108G01J1/42
CPCH01L31/108G01J1/42G01J2001/4295H01L31/02161
Inventor 不公告发明人
Owner 中山科立特光电科技有限公司
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