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Dielectric-metal photonic crystal, preparation method thereof and tera-hertz pulse generator

A metal photonic crystal and dielectric technology, applied in the field of terahertz optoelectronic devices, can solve the problems of emission intensity limitation, limitation of production efficiency, etc., and achieve the effects of terahertz intensity enhancement, terahertz intensity enhancement, and polarization adjustment

Inactive Publication Date: 2018-12-07
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The terahertz pulse generator based on the ultrafast spin process in ferromagnetic / nonmagnetic thin films developed in recent years has great advantages in terms of cost, spectrum, and simplicity, but its emission intensity has certain limitations; an important The reason is that it absorbs only a fraction of the femtosecond laser energy, which limits its production efficiency

Method used

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  • Dielectric-metal photonic crystal, preparation method thereof and tera-hertz pulse generator
  • Dielectric-metal photonic crystal, preparation method thereof and tera-hertz pulse generator
  • Dielectric-metal photonic crystal, preparation method thereof and tera-hertz pulse generator

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preparation example Construction

[0053] The present invention also provides a method for preparing the dielectric-metal photonic crystal described in the above technical solution, comprising the following steps:

[0054] a) metal layer and dielectric layer are periodically deposited successively on the insulating substrate to obtain a dielectric-metal photonic crystal; the dielectric-metal photonic crystal has a multilayer composite structure shown in formula (I):

[0055] [Dielectric layer / Metal layer] n / insulating substrate formula (I);

[0056] In formula (I), n is an integer between 1~10;

[0057] The metal layer is a multi-layer structure formed by alternate compounding of magnetic nano-films and non-magnetic nano-films.

[0058] In the present invention, the insulating substrate, the metal layer and the dielectric layer are the same as those described in the above technical solution, and will not be repeated here.

[0059] In the present invention, the process of periodically and sequentially depos...

Embodiment 1

[0074] Put the MgO insulating substrate with a thickness of 0.5mm into the magnetron sputtering vacuum chamber to evacuate, and the vacuum degree reaches 10 -5 Start sputtering at Pa; first use DC magnetron sputtering to grow a 2nm thick Fe magnetic nanofilm on the MgO insulating substrate, and then use DC magnetron sputtering to grow a 2nm thick Pt nonmagnetic nanofilm on the Fe magnetic nanofilm , so as to form a metal layer; then use radio frequency magnetron sputtering to grow 90nm thick SiO on the Pt non-magnetic nano film 2 Dielectric layer, forming a [dielectric layer / metal layer] periodic unit; the above process of forming a [dielectric layer / metal layer] periodic unit is repeated 3 times to obtain a dielectric-metal photonic crystal;

[0075] The dielectric-metal photonic crystal has a multilayer composite structure shown in the following formula:

[0076] [SiO 2 Dielectric layer / Pt non-magnetic nano film / Fe magnetic nano film] 3 / MgO insulating substrate.

Embodiment 2

[0078] Put the MgO insulating substrate with a thickness of 0.5mm into the magnetron sputtering vacuum chamber to evacuate, and the vacuum degree reaches 10 -5 Start sputtering at Pa; first use DC magnetron sputtering to grow 2nm thick W non-magnetic nano-films on the MgO insulating substrate, and then use DC magnetron sputtering to grow 2nm-thick Fe magnetic nano-films on the W non-magnetic nano-films Then use DC magnetron sputtering to grow a 2nm thick Pt nonmagnetic nanofilm on the Fe magnetic nanofilm to form a metal layer; then use radio frequency magnetron sputtering to grow a 110nm thick SiO on the Pt nonmagnetic nanofilm 2 Dielectric layer, forming a [dielectric layer / metal layer] periodic unit; the above process of forming a [dielectric layer / metal layer] periodic unit is repeated 3 times to obtain a dielectric-metal photonic crystal;

[0079] The dielectric-metal photonic crystal has a multilayer composite structure shown in the following formula:

[0080] [SiO 2 D...

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Abstract

The invention provides a dielectric-metal photonic crystal, a preparation method thereof and a tera-hertz pulse generator. The dielectric-metal photonic crystal has a multilayer composite structure represented in the following formula: [dielectric layer / metal layer]n / insulating substrate, wherein n is an integer in 1-10. The metal layer has a multilayer structure which is formed through alternatively combination of magnetic nanometer films and non-magnetic nanometer films. Compared with the prior art, the dielectric-metal photonic crystal according to the invention is advantages in that a specific structure is utilized, laser energy can be absorbed to a greater extent for exciting each metal layer to generate the tera-hertz pulse on one hand, and on the other hand, the tera-hertz pulses which are generated by the metal layers can be overlapped in a coherent manner, thereby greatly improving tera-hertz strength. The dielectric-metal photonic crystal applied to the tera-hertz pulse generator can maximally utilize femto second laser energy, thereby greatly improving tera-hertz strength and realizing wide frequency spectrum and adjustable polarization.

Description

technical field [0001] The invention relates to the technical field of terahertz optoelectronic devices, more specifically, to a dielectric-metal photonic crystal, a preparation method thereof and a terahertz pulse generator. Background technique [0002] Terahertz (THz) waves refer to electromagnetic waves with a frequency from 0.1THz to 10THz, between millimeter waves and infrared light. Terahertz waves have many unique properties, such as transmission, safety, strong spectral resolution, etc. These properties endow terahertz waves with a wide range of application prospects, including terahertz radar and communication, spectroscopy and imaging, non-destructive flaw detection, security detection etc. [0003] The terahertz generator is an important part of the terahertz system. The existing conventional terahertz pulse generation is mainly based on optical rectification, photoconductive antenna, air plasma, etc.; but they each have some weaknesses in terms of cost, spectr...

Claims

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Application Information

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IPC IPC(8): H01S1/02
CPCH01S1/02
Inventor 冯正王大承谭为
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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