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V-shaped-pit-based non-fluorescent-powder GaN-based white-light LED epitaxial structure and preparation method thereof

A technology with no phosphor powder and epitaxial structure, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of LED luminous efficiency decline and phosphor powder conversion efficiency, and achieve the effect of avoiding a sudden drop in efficiency

Inactive Publication Date: 2018-10-23
TAIYUAN UNIV OF TECH
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the deficiencies of the prior art, to provide a V-shaped pit-based GaN-based white LED epitaxial structure without phosphor and its preparation method, to solve the problem of low phosphor conversion efficiency and the formation of GaN-based three-dimensional structures. LED luminous efficiency decline caused by leakage channels and etching damage

Method used

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  • V-shaped-pit-based non-fluorescent-powder GaN-based white-light LED epitaxial structure and preparation method thereof
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Embodiment

[0027] This embodiment provides a V-shaped pit-based epitaxial structure of a phosphor-free GaN-based white light LED, such as figure 1 As shown, the structure includes a substrate, a nucleation layer formed on the substrate, an undoped GaN layer, an n-type GaN layer, a low-temperature n-type GaN layer, an InGaN / GaN multiple quantum well layer, a p-type GaN layer.

[0028] As an embodiment of the present invention, in this embodiment, the thickness of the non-doped GaN layer is 2 μm; the thickness of the n-type GaN layer is 2 μm; the thickness of the low-temperature n-type GaN layer is 100 nm, and the growth temperature is 830°C; The InGaN / GaN multi-quantum well layer has six well barrier periods, the thickness of the well layer is 2 nm, the growth temperature is 650 °C, the In composition is 25%, the thickness of the well layer is 10 nm, and the growth temperature is 800 °C; p-type GaN The thickness of the layer is 2 μm. As an alternative embodiment of the present invention...

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Abstract

The invention relates to the field of semiconductors, in particular to a V-shaped-pit-based non-fluorescent-powder GaN-based white-light LED epitaxial structure and a preparation method thereof. According to the invention, the GaN-based white-light LED epitaxial structure is composed of a substrate, a nucleation layer, a non-doped GaN layer, an n type GaN layer, a low-temperature n type GaN layerformed on the n type GaN layer, a multi-quantum-well layer formed at the low-temperature n type GaN layer, and a p type GaN filling layer. Lots of V-shaped pits are generated in the low-temperature ntype GaN layer because of the stress releasing and low atomic mobility under a low temperature; after growth of the multi-quantum-well layer, side-wall quantum wells are formed in the V-shaped pits, wherein the light-emitting wavelengths are different from that of the C-surface quantum well; and white light emission is realized by regulating the dimensions and densities of the V-shaped pits reasonably. During the preparation process of the non-fluorescent-powder GaN-based white-light LED, no mask template or inverse etching process is needed and thus the process is simplified. The V-shaped-pit-based non-fluorescent-powder GaN-based white-light LED epitaxial structure and the preparation method thereof have the broad industrial application prospects.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a V-shaped pit-based epitaxial structure of a GaN-based white light LED without phosphor and a preparation method thereof. Background technique [0002] Today, the field of solid-state lighting with InGaN light-emitting diodes (LEDs) shows great potential due to the bandgap of InGaN covering the entire visible light spectral region. Most white LEDs are formed by combining blue LEDs and yellow phosphors, however, they have a problem of low conversion efficiency. The use of the band gap properties of InGaN materials to prepare phosphor-free white LEDs has attracted great attention and in-depth research. Since quantum wells grown on different crystal planes have different well thicknesses and In compositions, the luminous wavelengths of quantum wells may vary significantly. Based on this, in recent years, people can control the emission wavelength of quantum wells by changing the geo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/22H01L33/00
Inventor 许并社韩丹张爱琴刘培植
Owner TAIYUAN UNIV OF TECH
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