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Method for improving filling defect of control gate

A technology for controlling gates and defects, applied in electrical components, electrical solid devices, circuits, etc., can solve the problems of reducing carrier mobility, reducing polysilicon grain boundaries, increasing polysilicon resistance, etc., to achieve the effect of eliminating void defects

Active Publication Date: 2018-10-16
WUHAN XINXIN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this approach will reduce the particle size of polysilicon, resulting in a reduction in the grain boundaries of polysilicon, reducing the mobility of carriers, and increasing the resistance of polysilicon. Therefore, the existing improved process also has relatively large defects.

Method used

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  • Method for improving filling defect of control gate
  • Method for improving filling defect of control gate
  • Method for improving filling defect of control gate

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Embodiment Construction

[0035] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0036] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0037] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.

[0038] In a preferred real-time example of the present invention, according to Figure 4 As shown, a method for...

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Abstract

The invention discloses a method for improving filling defect of a control gate. Poly-silicon is deposited on a surface of a semiconductor structure already formed with a floating gate structure at arelatively low temperature so as to form a poly-silicon layer, and high-temperature annealing is performed on a silicon wafer so that the poly-silicon is secondarily grown. With the method disclosed by the technical scheme of the invention, the hole defect during poly-silicon filling can be eliminated, meanwhile, the resistance value of the poly-silicon and the carrier mobility are maintained unchanged, and the process requirement is achieved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for improving control gate filling defects. Background technique [0002] In the existing manufacturing process of semiconductor memory, the process of forming a control gate on the wafer surface is included. In an existing process for forming a control gate, a polysilicon deposition process under high temperature conditions is usually used. However, polysilicon not only has a faster deposition rate but also has a larger grain size under high temperature conditions. Therefore, the polysilicon deposited in the high-aspect-ratio floating gate space in the existing process will form voids, resulting in a decrease in the contact area between the control gate and the floating gate, and ultimately affecting the coupling rate of the device. [0003] As the device size gradually decreases, the opening of the trench between the floating gates becomes smaller and small...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28H01L27/11526H10B41/40
CPCH01L29/401H10B41/40
Inventor 黄胜男谢峰周俊
Owner WUHAN XINXIN SEMICON MFG CO LTD
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