High-k dielectric trench lateral double-diffused metal oxide element semiconductor field effect transistor and method of making the same

Abstract

The invention provides a high-K dielectric (High-K Dielectric Pillar, HK) trench lateral double-diffused metal oxide element semiconductor field effect transistor (LDMOS) and a manufacturing method thereof. The device mainly forms a deep trench high dielectric constant dielectric layer at the drain end, the lower end of the high K dielectric trench layer penetrates into the epitaxial layer above the device substrate, and the upper end is connected with the drain electrode of the device. The HK dielectric trench and the elemental semiconductor material substrate form a MIS capacitor structure, which can effectively assist in depleting the charge of the device substrate when the device is turned off, so that the LDMOS with a low-resistance substrate can obtain a high breakdown voltage; and the device is reversed. When facing the withstand voltage, the uniform electric field of the HK dielectric trench effectively modulates the electric field distribution in the device body, reduces the vertical high electric field at the drain end of the device, improves the breakdown voltage of the device, and solves the problem that the breakdown voltage of LDMOS increases with the length of the drift region The problem of easy saturation.

Description

technical field [0001] The invention relates to the field of power semiconductor devices, in particular to a lateral double-diffusion metal oxide element semiconductor field effect transistor and a manufacturing method thereof. Background technique [0002] With the rapid development of new power semiconductor devices represented by power MOSFET devices, power semiconductor devices are widely used in computer, lighting, consumer electronics, automotive electronics, industrial drives and other fields. Power semiconductor devices are the core of green, low power consumption, energy saving and environmental protection device. Lateral Double-diffused MOS (Lateral Double-diffused MOS, referred to as LDMOS) as a representative of the lateral power device with high withstand voltage and low on-resistance has the advantages of easy integration, good thermal stability, good frequency stability, low power consumption, The advantages of multi-element conduction, small power drive, and...

AI Technical Summary

Problems solved by technology

In the design optimization process of lateral power devices such as LDMOS, with the optimization of surface electric field terminal technology, including reduced surface electric field technology (Reduced Surface Field, referred to as RESURF), field plate (Field Plate, referred to as FP) technology, lateral variable doping ( With the application of technologies such as Variation of Lateral Doping (VLD for short), the surface electric field of lateral power devices has been optimized to a certain extent, but there are few technologies for optimizing the vertical electric field of devices.

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