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Method for forming gate isolation groove of three-dimensional storage device and photomask used by method

A technology of three-dimensional storage and photomask, applied in the field of photomask

Active Publication Date: 2018-09-04
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This offset can cause leakage problems between the gate spacer and channel hole structures

Method used

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  • Method for forming gate isolation groove of three-dimensional storage device and photomask used by method
  • Method for forming gate isolation groove of three-dimensional storage device and photomask used by method
  • Method for forming gate isolation groove of three-dimensional storage device and photomask used by method

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Embodiment Construction

[0031] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0032] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0033] As shown in the present application and claims, unless the context clearly indicates exceptions, the words "a", "an", "an" and / or "the" do not specifically refer to the singular, but may also include the plural. Generally speaking, the terms "include" and "include" only suggest that the clearly identified steps and elements are included, and these steps and elements do not constitute an exclusive list, and t...

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Abstract

The invention relates to a method for forming a gate isolation groove of a three-dimensional storage device and a photomask used by the method. The method for forming the gate isolation groove of thethree-dimensional storage device comprises the following steps of providing a semiconductor structure, wherein the semiconductor structure comprises a lamination structure, and a channel hole array isarranged on the lamination structure; photoetching the semiconductor structure by using the photomask, wherein the photomask is provided with one or more lines for forming one or more gate isolationgrooves, and at least one of the lines is bent towards a center of the photomask; and etching the semiconductor structure to form one or more gate isolation grooves. By the method, the distance between the gate isolation groove and each channel hole in each line of channel holes adjacent to the gate isolation groove can be trend to be consistent, and an electric leakage risk of the three-dimensional storage device is reduced.

Description

Technical field [0001] The present invention mainly relates to a semiconductor manufacturing method, in particular to a three-dimensional storage device, a method for forming a gate isolation groove of the three-dimensional storage device, and a photomask used in this method. Background technique [0002] In order to overcome the limitation of two-dimensional storage devices, the industry has developed storage devices with three-dimensional (3D) structures, which increase the integration density by arranging memory cells three-dimensionally on the substrate. [0003] The block storage area (block) of the three-dimensional memory device may include one or more finger storage areas, and each finger storage area is separated by a gate line slit (GLS). In the manufacturing process of the three-dimensional memory device, the gate isolation groove is formed after channel holes are formed on the stacked structure. There will be a thermal process in the process of filling the channel hole...

Claims

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Application Information

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IPC IPC(8): H01L27/11548H01L27/11551H01L27/11575H01L27/11578
CPCH10B41/50H10B41/20H10B43/50H10B43/20
Inventor 许波严萍杨川高晶丁蕾张森刘力恒
Owner YANGTZE MEMORY TECH CO LTD
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