Preparation method of tin dioxide-based gas sensitive material and hydrogen sulfide gas sensor chip, hydrogen sulfide gas sensor

Abstract

The invention provides a preparation method of a tin dioxide-based gas sensitive material. The method comprises the following steps: adding a weak acid into a salt solution of tin, regulating the pH value of the solution to be 1-2, and uniformly stirring at a first present temperature; adding a weak base at a preset rate until the pH value of the solution is regulated to 2-3, and continuously stirring to be in a gel state; taking out the gel, heating the gel to a second preset temperature, and adding a weak acid to regulate the pH value to be 1.5-2; adding polyethylene glycol, drying and sintering to obtain tin dioxide powder; adding metal salts and volatile alcohol solvents into the tin dioxide powder, grinding to obtain slurry, and sintering for preset time, thereby obtaining the metal doped tin dioxide-based gas sensitive material. The invention further provides a preparation method of a hydrogen sulfide gas sensor chip and a hydrogen sulfide gas sensor. By changing the preparationprocess of the gas sensitive material, the technical problem that a SnO2 base material does not have any response to H2S gas at a normal temperature is solved.

Description

Technical field [0001] The invention relates to the technical field of gas sensors, in particular to a method for preparing a tin dioxide-based gas sensitive material and a hydrogen sulfide gas sensor chip, and a hydrogen sulfide gas sensor. Background technique [0002] At present, most of the gas sensors used to detect hydrogen sulfide are electrochemical or semiconductor sensors. However, electrochemical sensors generally have the problem of being too large, and may cause poisoning and permanent damage due to continuous exposure for a long time, so their life is not long. Among the semiconductor sensors, the most mature and most used semiconductor gas sensors are generally metal oxide semiconductor gas sensors, which have high sensitivity, long life, and can withstand high-concentration hydrogen sulfide exposure, and they can quickly recover without damaging their functions. advantage. However, metal oxide semiconductor gas sensors have the disadvantage of excessive power co...

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Problems solved by technology

[0005] A further object of the present invention is to solve the problem of SnO in the prior art 2 The technical problem of poor anti-interference ability of materials and low sensitivity

[0006] Another further object of the present invention is to solve the technical problem that the hydrogen sulfide gas sensor in the prior art is a thick film sensor, and the film is prone to cracking at high temperature

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