Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Liquid vaporizing device and semiconductor processing system using same

A vaporization device, liquid technology, applied in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., can solve problems such as prolonged vaporization time and lack of

Active Publication Date: 2018-07-13
PIOTECH CO LTD
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these technical means lack the goal of prolonging the vaporization time and maintaining the uniformity of the cavity temperature at the same time.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Liquid vaporizing device and semiconductor processing system using same
  • Liquid vaporizing device and semiconductor processing system using same
  • Liquid vaporizing device and semiconductor processing system using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] In this specification and the following patent claims, unless the context requires otherwise, the word "comprise" and variants such as "comprising" or "comprising" will be understood as implying that the integer group or step is included, but Any other integer or group of integers is not excluded.

[0030] figure 1 An embodiment 100 of a semiconductor processing system of the present invention is shown. The system 100 includes a reaction chamber 110 , a vaporization device 120 and an exhaust system 130 . In general, a typical reaction chamber 110 mainly has a support structure 111 for supporting wafers, a shower device 112 for supplying reaction gases, and at least one exhaust channel (not shown) for exhausting process exhaust gases. . The reaction chamber 110 is substantially cylindrical, and the support structure 111 has a base for horizontally supporting the wafer and a support member for supporting the base. The susceptor may embed a heater for heating the susce...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an efficient liquid vaporizer for semiconductor film forming. The liquid vaporizer vaporizes liquid raw materials for specific film forming, and finally, vaporized gas is output into a semiconductor film forming reaction cavity through carrier gas and through a gas channel to prepare a thin film. A liquid vaporizing device comprises a main body and a stopper. The main bodyis defined as a cavity, and the cavity is provided with an input end used for receiving one or more raw materials and an output end used for discharging the gas. The stopper is arranged in the cavityof the main body, and the cavity is divided into a first cavity body and a second cavity body by means of the stopper. The first cavity body comprises the input end, and the second cavity body comprises the output end. The stopper is provided with one or more hole-shaped channels, and the first cavity body communicates with the second cavity body mutually through the hole-shaped channels.

Description

technical field [0001] The invention relates to the field of semiconductor wafer processing, in particular to a liquid vaporization device, which is mainly used to vaporize liquid raw materials and provide them to semiconductor processing systems as reaction gases. Background technique [0002] At present, in the application and manufacture of semiconductor thin film deposition, reaction gas and / or film forming gas are mainly provided by a liquid raw material through a vaporization device. The improvement of the vaporization efficiency of the liquid helps to improve the utilization rate of the raw material, and sufficient vaporization of the liquid raw material also helps to form a satisfactory semiconductor film. Therefore, improving the vaporization efficiency of the vaporization device has become a key goal in design and manufacture. The improvement of vaporization efficiency is mainly related to some factors, including prolonging the vaporization time of liquid raw mate...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C16/448H01L21/67
CPCC23C16/4483H01L21/67017
Inventor 周仁张宝戈侯彬吕欣张建
Owner PIOTECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com