Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method of casting polysilicon target material using powder

A polysilicon and powder technology is applied in the field of casting polysilicon targets using powder, which can solve the problems of small silicon powder particles, difficult to melt, easy sticking of silicon ingots, difficult powder materials, etc., so as to improve quality and avoid cracks in silicon ingots. , the effect of reducing costs

Active Publication Date: 2020-11-10
QINGDAO BLUE LIGHT NEW MATERIAL CO LTD
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] At present, in the casting process of polysilicon targets, the main raw materials used are block materials. However, there are many low-cost powders below the micron level on the market that are difficult to apply. The main problem is that silicon powder is difficult to completely melt due to the small particles. , the bottom of the silicon ingot is easy to stick to the crucible and cause the ingot to crack

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] A method for casting a polysilicon target material using powder, specifically comprising the following steps:

[0016] (1) During the charging process, first load 20kg of 3mm polysilicon pellets into the bottom, and cover the bottom completely (to avoid sticking to the crucible). After the edge is protected by block materials, 300kg of micron-sized silicon powder is loaded and paved. Spread 30kg of 3mm polysilicon granules on the top of the powder to insulate the powder, and place 200kg of block material on the top of the granules for compaction.

[0017] (2) After putting the loaded silicon material into the furnace, manually vacuumize at low speed for 3 hours (to avoid the powder being sucked away), heat to evaporate the moisture of the graphite device, heat insulation layer, raw materials, etc., and reach 1000 °C in 3 hours; Introduce argon as a protective gas to keep the pressure in the furnace at 40KPa, so that the temperature in the crucible quickly reaches 1400°...

Embodiment 2

[0023] A method for casting a polysilicon target material using powder described in this embodiment, its steps are the same as in Embodiment 1, and the different technical parameters are:

[0024] 1) In step (1), firstly, 25 kg of 6 mm polysilicon pellets are loaded at the bottom. After the edge is protected by block materials, 450kg of micron-sized silicon powder is loaded and paved. Spread 40kg of 6mm polysilicon granules on the top of the powder to insulate the powder, and place 250kg of block material on the top of the granules for compaction.

[0025] 2) In step (2), manually vacuumize at low speed for 3.25 hours, and heat up to 1100°C in 3.5 hours; feed argon as a protective gas to keep the pressure in the furnace at 50KPa, so that the temperature in the crucible can quickly reach 1430°C within 5 hours °C into the melting stage.

[0026] 3) In step (3), the temperature is gradually increased from 1430°C to 1550°C after 8 hours until the silicon material is completely m...

Embodiment 3

[0031] 1) In step (1), firstly, 30 kg of 10 mm polysilicon pellets are loaded at the bottom. After the edge is protected by block materials, 600kg of micron-sized silicon powder is loaded and paved. Spread 50kg of 10mm polysilicon granules on the top of the powder to insulate the powder, and place 300kg of block material on top of the granules for compaction.

[0032] 2) In step (2), manually vacuumize at low speed for 3.5 hours, and heat up to 1200°C in 4 hours; feed argon as a protective gas to keep the pressure in the furnace at 60KPa, so that the temperature in the crucible can quickly reach 1460°C within 6 hours Enter the melting stage.

[0033] 3) In step (3), the temperature is gradually increased from 1460°C to 1560°C over 9 hours until the silicon material is completely melted, and the heat preservation is continued for 2 hours after the silicon material is completely melted and no floating objects are observed through the top observation window.

[0034] 4) In step...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of multi-crystalline silicon target material casting, in particular to a method using powder to cast a multi-crystalline silicon target material. The method has the advantages that by improving a material loading method and process control during the multi-crystalline silicon target material casting, the micron-scale powder is molten thoroughly to prevent ingots from adhering to a crucible, and the integral target material ingots meeting requirements can be obtained; by the method, requirements on raw material granularity can be lowered, and accordingly raw material use cost can be lowered; by the method, silicon ingot cracks caused by the fact that the ingots are adhered to the crucible can be avoided, and the quality of the multi-crystalline integral target material ingots is increased.

Description

technical field [0001] The invention relates to the technical field of casting polysilicon targets, in particular to a method for casting polysilicon targets using powder materials. Background technique [0002] At present, in the casting process of polysilicon targets, the main raw materials used are block materials. However, there are many low-cost powders below the micron level on the market that are difficult to apply. The main problem is that silicon powder is difficult to completely melt due to the small particles. , the bottom of the silicon ingot is easy to stick to the crucible and cause the ingot to crack. Contents of the invention [0003] The object of the present invention is to provide a method for casting a polysilicon target material using powder to solve the problems existing in the above-mentioned prior art. In order to achieve the above object, the technical solution adopted by the present invention is: a method for casting polysilicon target material u...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B28/06C30B29/06
CPCC30B28/06C30B29/06
Inventor 王峰张磊姚玉杰
Owner QINGDAO BLUE LIGHT NEW MATERIAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com