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Preparation method of VO2 thin film composite structure for near-infrared multi-band absorber

A composite structure and absorber technology, which is applied in the field of VO2 thin film composite structure preparation of near-infrared multi-broadband absorbers, can solve problems such as narrow absorption spectrum and absorption rate attenuation, achieve simple operation, high production efficiency, and realize multi-broadband absorption. Effect

Inactive Publication Date: 2018-05-15
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Since the metamaterial itself relies on resonance absorption, the absorption spectrum is very narrow, and most of it only absorbs for a single resonance frequency. Once it is far away from the resonance frequency, the absorption rate will attenuate

Method used

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  • Preparation method of VO2 thin film composite structure for near-infrared multi-band absorber
  • Preparation method of VO2 thin film composite structure for near-infrared multi-band absorber
  • Preparation method of VO2 thin film composite structure for near-infrared multi-band absorber

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] (1) Substrate cleaning:

[0027] The aluminum oxide substrate used is double-polished sapphire with (001) crystal plane, with a size of 1×1cm 2 , The thickness is 0.45mm. Put the substrate in deionized water, acetone, and absolute ethanol in order to ultrasonically clean it for 20 minutes to remove organic impurities on the surface; then wash it with deionized water, and finally put the substrate in absolute ethanol for later use.

[0028] (2) Evaporate and sputter gold film to prepare gold reflection layer:

[0029] A 100nm gold thin film was evaporated and sputtered on the cleaned substrate.

[0030] (3) Preparation of monodisperse SiO 2 mask layer:

[0031] First, insert the cleaned drain piece obliquely into deionized water, and then use a pipette gun to dissolve SiO with a particle size of 600nm 2 The ball solution is added dropwise to the drainage sheet, and it slowly flows to the water surface, and spreads evenly to form a high-density, large-area single-lay...

Embodiment 2

[0040] (1) Substrate cleaning:

[0041] The aluminum oxide substrate used is double-polished sapphire with (001) crystal plane, with a size of 1×1cm 2, The thickness is 0.45mm. Put the substrate in deionized water, acetone, and absolute ethanol in order to ultrasonically clean it for 30 minutes to remove organic impurities on the surface; then wash it with deionized water, and finally put the substrate in absolute ethanol for later use.

[0042] (2) Evaporate and sputter gold film to prepare gold reflection layer:

[0043] A 100nm gold thin film was evaporated and sputtered on the cleaned substrate.

[0044] (3) Preparation of monodisperse SiO 2 mask layer:

[0045] First, insert the cleaned drain piece obliquely into deionized water, and then use a pipette gun to dissolve SiO with a particle size of 600nm 2 The ball solution is added dropwise to the drainage sheet, and it slowly flows to the water surface, and spreads evenly to form a high-density, large-area single-laye...

Embodiment 3

[0051] (1) Substrate cleaning:

[0052] The aluminum oxide substrate used is double-polished sapphire with (001) crystal plane, with a size of 1×1cm 2 , The thickness is 0.45mm. Put the substrate in deionized water, acetone, and absolute ethanol in order to ultrasonically clean it for 30 minutes to remove organic impurities on the surface; then wash it with deionized water, and finally put the substrate in absolute ethanol for later use.

[0053] (2) Evaporate and sputter gold film to prepare gold reflection layer:

[0054] A 100nm gold thin film was evaporated and sputtered on the cleaned substrate.

[0055] (3) Preparation of monodisperse SiO 2 mask layer:

[0056] First, insert the cleaned drain piece obliquely into deionized water, and then use a pipette gun to dissolve SiO with a particle size of 600nm 2 The ball solution is added dropwise to the drainage sheet, and it slowly flows to the water surface, and spreads evenly to form a high-density, large-area single-lay...

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Abstract

The invention discloses a preparation method of a VO2 thin film composite structure for a near-infrared multi-band absorber. The composite structure mainly comprises a substrate sapphire, a gold reflection layer, a silicon dioxide nanosphere array and a vanadium dioxide film. The preparation method of the VO2 thin film composite structure for the near-infrared multi-band absorber is characterizedin that the gold film reflection layer is plated on a sapphire substrate through evaporation, the single-layer silicon dioxide sphere array is lifted on the gold film, a metal vanadium thin film is obtained through magnetron sputtering, and the vanadium dioxide film is prepared by a rapid thermal annealing method, so that the composite nanometer structure is formed, and near-infrared multi-broadband absorption is realized.

Description

technical field [0001] The present invention relates to the preparation technology of near-infrared multi-broadband absorber, in particular to a kind of VO for near-infrared multi-broadband absorber 2 Preparation method of thin film composite structure. Background technique [0002] Electromagnetic metamaterials (Metamaterials) are artificial composite structures or composite materials [1] , has peculiar electromagnetic properties that conventional materials in nature do not have. By rationally designing the geometric structure and size of metamaterials, their perfect absorption of electromagnetic waves in specific frequency bands can be achieved. Electromagnetic metamaterial perfect absorbers have potential applications in terahertz imaging, matter detection, solar cells, etc. [0003] Vanadium dioxide (VO 2 ) is a temperature sensitive material [2] , at 68°C, a change from a semiconductor phase to a metal phase will occur. During the phase transition, the crystal struc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/58C23C14/18C23C14/02
CPCC23C14/35C23C14/024C23C14/025C23C14/185C23C14/5853
Inventor 梁继然李鹏宋晓龙周立伟郭津榜
Owner TIANJIN UNIV
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