Driving system of GaN power device
A technology for driving systems and power devices, applied in the application field of GaN power devices, can solve the problems of false turn-on of oscillation peaks, high power loss of GaN driving circuits, low gate threshold voltage, etc. Loss problem, effect of slowing ascent
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[0022] Now, the present invention will be further explained and described by combining specific embodiments and accompanying drawings.
[0023] figure 1 It is the overall structural block diagram of the drive system. from figure 1 It can be seen from the figure that the drive system applicable to GaN power devices in the present invention includes a control circuit 1, a turn-on resonant circuit 2, a turn-off resonant circuit 4 and a lossless buffer circuit 3. The control circuit is used to generate two PWM signals to drive the auxiliary switch tube conduction; the resonant circuit is used to realize the turn-on and turn-off of GaN T1; the lossless snubber circuit is used to slow down the rising speed of the drain voltage of the main switch tube T1, and protect the main switch tube T1.
[0024] In the above embodiment, the control circuit includes upper and lower PWM outputs, which can control the gate driving voltage of the auxiliary switching tube, and the gate driving volt...
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Abstract
Description
Claims
Application Information
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