Fabrication method of chip

Abstract

The invention discloses a fabrication method of a chip. A transition substrate in lattice matching of a target epitaxial layer is employed, and a transition epitaxial layer with an integral crystal structure can be formed on a surface of the transition substrate by an epitaxial process; since the transition epitaxial layer is of the integral crystal structure, the target epitaxial layer with a single-crystal structure can be formed on a target substrate which is not in lattice matching by the epitaxial process and by taking the transition epitaxial layer as a target material; since the targetepitaxial layer is of the single-crystal structure formed by the epitaxial process, the thickness accuracy of the target epitaxial layer is relatively good, the growth stress with the target substrateis relatively small, a new substrate is not needed to be laminated so as to perform substrate transferring, the problems of relatively poor growth thickness accuracy and relatively large lamination stress and growth stress of the epitaxial layer in the prior art are solved, and the reliability of an LED chip is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor technology, and more specifically, to a method for manufacturing a chip. Background technique [0002] The method of industrial production of LED chips is generally to grow the epitaxial layers of LED chips sequentially on sapphire, silicon carbide or silicon substrates to form epitaxial wafers. The epitaxial layer is transferred to a new substrate to improve the optoelectronic performance of the LED chip. The method of transferring the epitaxial layer is to press a new substrate on the epitaxial wafer, and then remove the epitaxial substrate, so as to transfer the epitaxial layer from the epitaxial substrate to the new substrate. [0003] In the prior art, the sapphire substrate is generally removed by a laser lift-off method, the silicon carbide substrate is generally removed by a light-enhanced chemical etching method, and the silicon substrate is generally removed by a chemical etching ...

AI Technical Summary

Problems solved by technology

[0005] In order to solve the above problems, the technical solution of the present invention provides a method for manufacturing a chip, which does not require substrate transfer, and overcomes the poor accuracy of the growth thickness of the epitaxial layer, the large pressing stress and the growth stress in the prior art problem, improve the reliability of the LED chip

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