Edge heating system for quasi-G7 ingot-casting thermal field

Abstract

An edge heating system for a quasi-G7 ingot-casting thermal field comprises an ingot furnace with internal diameter of 1830 mm. a thermal-insulation steel cage is arranged inside the ingot furnace. The thermal-insulation steel cage is provided with a thermal-field insulation device which is made of a carbon felt insulation board. A heating device is installed at the inner side of the thermal-fieldinsulation device. The heating device comprises multiple side-edge heaters and side-angle heaters, which are connected in pairs through corner connectors. The heating device is communicated with an electrode power-supply through a graphite arm heating plate. Through the edge heating device, crystal growth quality can be improved, primary dislocation of crystals is reduced, minor carrier lifetimeof a silica-based material is prolonged, and then photoelectric conversion efficiency of silicon wafers is raised.

Description

technical field [0001] The invention relates to an edge heating system for a quasi-G7 ingot heating field. Background technique [0002] Photovoltaic power generation is a technology that uses the semiconductor interface to make sunlight shine on silicon materials, thereby directly converting light energy into electrical energy. Compared with the short development history of human beings, solar energy is an inexhaustible source of huge energy. At the same time, compared with traditional energy sources, solar energy has the advantages of persistence, cleanliness and flexibility. No pollution, no noise, no need for mining and transportation, not only can directly provide electric energy for small electrical appliances, but also can be connected to the grid for power generation, and has a wide range of applications. However, with the development of the industry, a steady stream of new competitors have entered the industry, making the competition in the photovoltaic industry ex...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide an edge heating system for the quasi-G7 ingot thermal field, which solves the problem of insufficient radiation on the heating surface of ordinary heating devices, especially for the low heat radiation at the side corners of silicon ingots, which may easily cause crystal cracks. Microcrystals, high dislocations, high edge impurity concentration, and low minority carrier lifetime appear in the ingot.

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