An electrostatic chuck and semiconductor processing device

An electrostatic chuck and substrate technology, which is applied in semiconductor/solid-state device manufacturing, circuits, discharge tubes, etc., can solve the problems of adverse effects of etching machine etching uniformity, prone to tilting, wafer tilting, etc., to improve process quality and process efficiency, reducing the probability of inclination, and reducing the cost of thimbles

Active Publication Date: 2020-02-14
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] For the setting where the position of the thimble is close to the center of the electrostatic chuck, when the wafer is ejected during the electrostatic discharge process of the electrostatic chuck, the center of the wafer is easily shifted outside the support area surrounded by the thimble, which will cause the wafer to tilt, which in turn will cause The robot cannot remove it from the electrostatic chuck
[0006] For the setting of the thimble position close to the edge of the electrostatic chuck, since the edge of the electrostatic chuck is integrated with cooling gas through holes and electrical holes in addition to the thimble, setting too many thimbles on the edge of the electrostatic chuck will affect the cooling gas through holes and electrical holes. Therefore, the setting of the thimble on the edge of the electrostatic chuck will, on the one hand, cause the wafer to break away from the support of part of the thimble when the wafer is ejected during the electrostatic discharge process of the electrostatic chuck, which is prone to tilting; on the other hand, if the thimble is set Too much will also adversely affect the uniformity of the etching machine

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • An electrostatic chuck and semiconductor processing device
  • An electrostatic chuck and semiconductor processing device
  • An electrostatic chuck and semiconductor processing device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] This embodiment provides an electrostatic chuck, such as figure 1 As shown, it includes an electrostatic chuck base 1 and a thimble assembly arranged inside the electrostatic chuck base 1. The thimble assembly can be raised and lowered to lift and lower the wafer placed on the electrostatic chuck base 1. The thimble assembly includes The thimbles 2 arranged in the edge area and the central area of ​​the electrostatic chuck base 1 are distributed in a regular triangle of different sizes, and the center of the regular triangle coincides with the center P of the electrostatic chuck base 1 correspondingly.

[0035] By making the thimble 2 be arranged on the edge area and the central area of ​​the electrostatic chuck base body 1 to form a regular triangle distribution of different sizes, and make the center of the regular triangle coincide with the center P of the electrostatic chuck base body 1 correspondingly, it is possible to place the electrostatic chuck on the wafer rel...

Embodiment 2

[0046] This embodiment provides an electrostatic chuck, which is different from Embodiment 1, such as Image 6 As shown, the three second thimbles 22 are respectively located inside the sides of the regular triangle formed by the three first thimbles 21 and correspond to the midpoints of the sides of the regular triangle formed by the first thimbles 21 .

[0047] Arranged in this way, the first thimbles 21 form an equilateral triangle distribution in the edge area of ​​the electrostatic chuck base 1, and the second thimbles 22 form an equilateral triangle distribution in the central area of ​​the electrostatic chuck base 1, so that the relative static electricity on the wafer can be formed. When the center of gravity of the chuck base 1 shifts within a certain range, the rest of the thimble 2 that effectively supports the wafer can still effectively disperse the force applied to the wafer, so that the gravity of the wafer is still equal to that of the thimble 2 that effectively...

Embodiment 3

[0050] This embodiment provides an electrostatic chuck, which is different from Embodiment 1-2, such as Figure 7 As shown, the three second thimbles 22 are respectively located outside the sides of the regular triangle formed by the three first thimbles 21 and correspond to the midpoints of the sides of the regular triangle formed by the first thimbles 21 .

[0051] Arranged in this way, the first thimbles 21 form an equilateral triangle distribution in the edge area of ​​the electrostatic chuck base 1, and the second thimbles 22 form an equilateral triangle distribution in the central area of ​​the electrostatic chuck base 1, so that the relative static electricity on the wafer can be formed. When the center of gravity of the chuck base 1 shifts within a certain range, the remaining thimbles that effectively support the wafer can still effectively disperse the force applied to the wafer, so that the gravity of the wafer is still equal to the resultant force of the thimble 2 t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides an electrostatic chuck and a semiconductor processing apparatus. The electrostatic chuck comprises an electrostatic chuck substrate and an ejector pin assembly arranged in the electrostatic chuck substrate; the ejector pin assembly can perform uprising and declining to lift up and put down a wafer on the electrostatic chuck substrate; the ejector pin assembly comprises ejector pins which are in regular triangular distribution with different sizes on the edge region and the central region of the electrostatic chuck substrate; and the center of the regular triangular correspondingly coincides with the center of the electrostatic chuck substrate. By virtue of the electrostatic chuck, applied force on the wafer can be dispersed effectively when the wafer has no positionoffset relative to the electrostatic chuck substrate and when the bonding wafer has certain centre-of-gravity offset within a certain range relative to the electrostatic chuck substrate, so that the gravity of the wafer is still equal to the combined force of the ejector pin assembly which forms effective supporting for the wafer, thereby ejecting the wafer stably and avoiding inclination of the wafer; and therefore, it is ensured that a mechanical arm can smoothly take off the wafer from the electrostatic chuck, and smooth implementation of the subsequent process also can be ensured.

Description

technical field [0001] The invention relates to the technical field of semiconductor device preparation, in particular to an electrostatic chuck and a semiconductor processing device. Background technique [0002] At present, solid-state image sensors have been widely used, and there are two different design structures: CCD (Charge Coupled Image Sensor) and CMOS (Complementary Metal-Oxide Semiconductor Image Sensor). Compared with CCD, CMOS can provide better image quality, and can make imaging components and processing electronic components in the same chip die, with small size, low power consumption and simple assembly. Therefore, various optical lenses are mainly used at present. is a CMOS image sensor. [0003] The composition of CMOS is mainly a glass layer and a silicon layer, with a chip layer in between. The main way to package CMOS devices is to use wafer-level packaging. The solution widely adopted in the industry is to use TSV (through silicon via, through silic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/683H01J37/32
CPCH01J37/32431H01J37/32715H01L21/6831H01L21/6833
Inventor 周娜
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products