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High-frequency line

A high-frequency, line technology, applied in the field of high-frequency lines, to achieve the effect of suppressing impedance changes

Active Publication Date: 2018-02-16
NIPPON TELEGRAPH & TELEPHONE CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the high-frequency wiring 103 connected to the modulation electrode 102 inevitably crosses the optical waveguide 101 that transmits the optical signal.

Method used

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Experimental program
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Effect test

no. 1 approach

[0054] exist Figure 4A A plan view of the segment unit of the high-frequency line according to the first embodiment of the present invention is shown in Figure 4B Its IVB-IVB sectional view is shown in Figure 4C Its IVC-IVC transverse cross-sectional view is shown in Figure 4D Its IVD-IVD transverse cross-sectional view is shown in . The high-frequency line of the present embodiment is a microstrip line, and its basic structure is formed by laminating a ground electrode 302 , a dielectric layer 304 , and a signal electrode 305 in this order on an SI-InP substrate 301 . In addition, as shown in the lateral cross-sectional view, the optical waveguide cores 303 of InP-based semiconductors intersect in a state of crossing the high-frequency line 305 .

[0055] like Figure 4B sectional view, Figure 4D As shown in the transverse cross-sectional view of the optical waveguide, the ground electrode 302 of the high-frequency line is partially interrupted along the transmissio...

no. 2 approach

[0062] exist Figure 7A A plan view of the segment unit of the high-frequency line according to the second embodiment of the present invention is shown in Figure 7B Its VIIB-VIIB cross-sectional view is shown in Figure 7C Its VIIC-VIIC cross-sectional view is shown in Figure 7D Its VIID-VIID cross-sectional view is shown in . The high-frequency line of this embodiment is a grounded coplanar line, and its basic structure is formed by sequentially stacking a lower ground electrode 702 , a dielectric layer 704 , a signal electrode 705 and an upper ground electrode 706 on an SI-InP substrate 701 . In addition, as shown in the lateral cross-sectional view, the optical waveguide cores 703 of the InP-based semiconductor intersect with each other in the form of crossing the high-frequency line.

[0063] As described in the first embodiment, the dielectric constant between the lower-layer ground electrode 702 and the signal electrode 705 is locally changed due to the presence of ...

no. 3 approach

[0071] In addition, in Figure 9A A top view of a grounded coplanar line according to a third embodiment of the present invention is shown in Figure 9B Its IXB-IXB sectional view is shown in the Figure 9C Its IXC-IXC cross-sectional view is shown in Figure 9D Its LCD-LCD cross-sectional view is shown in the figure. like Figure 9A As shown, the width of the signal electrode 905 is the same, the width of the upper ground electrode 906 in the optical waveguide intersection region is enlarged, and the interval between the signal electrode 905 and the upper ground electrode 906 may be changed, specifically, narrowed. In the case of the compensation structure (narrow SG gap electrode), such as Figure 8B As shown, the effect of suppressing the rise in characteristic impedance and the effect of suppressing the increase in excess electrical loss were also confirmed.

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Abstract

The present invention provides a high-frequency line provided with a structure that minimizes impedance fluctuation and generation of excessive loss of electricity in a high-frequency wiring that intersects an optical waveguide. This high-frequency line is a microstrip line configured primarily from a ground electrode (302), a dielectric layer (304), and a signal electrode (305) stacked in the stated order on a SI-InP substrate (301). The optical waveguide core (303) of an InP-type semiconductor intersects the high-frequency line (305) in a transverse arrangement as shown in a transverse cross-sectional view. The width of the signal electrode (305) partially increases along the propagation direction of the high-frequency line in a fixed region that includes the intersection with the optical waveguide. The width of the signal electrode (305) in the microstrip line is increased in part from w1 to w2, and the characteristic impedance is reduced to a greater extent than when the width is uniform at w1. The length l2 of a second signal electrode part (325) that has a width of w2 is set sufficiently shorter than the wavelength of inputted high-frequency electric signals.

Description

technical field [0001] The present invention relates to a high-frequency line for applying electrical signals to modulation electrodes of an optical modulator or the like. Background technique [0002] With the explosive increase in the amount of data traffic in recent years, the increase in the capacity of the optical communication system is required, and the integration and complication of the optical components used, and the speed-up of the signal are being promoted. Among these optical components, for example, a light modulator can be cited. Recently, in order to increase the transmission capacity, an optical I / Q modulator based on a Mach-Zehnder (MZ: Mach-Zehnder) modulator (for example, refer to Non-Patent Document 1) has been gradually applied between two polarized light Two polarization multiplexed optical I / Q modulators (a total of four Mach-Zehnder modulators are integrated) are integrated in the use, and the Mach-Zehnder modulators are combined with QPSK (Quadrat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P3/08G02F1/025H01P3/00
CPCG02F1/025H01P5/087H01P5/022H01P3/003H01P3/081
Inventor 菊池顺裕山田英一小木曾义弘尾崎常祐
Owner NIPPON TELEGRAPH & TELEPHONE CORP
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