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Dry etching method

A dry etching and etching rate technology, applied in semiconductor devices, electrical components, transistors, etc., can solve problems such as inability to guarantee dry etching quality and other thin film damages

Inactive Publication Date: 2018-01-26
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] When the sensor is integrated with the thin-film transistor substrate, it is necessary to perform a dry etching process on the silicon-containing thin film layer of the silicide material in the thin-film transistor substrate. The damage is also very serious, and the quality of dry engraving cannot be guaranteed

Method used

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Effect test

Embodiment 1

[0047] An embodiment of the present invention provides a dry etching method, including:

[0048] 70% of the thickness of the silicon-containing film layer was etched away by chlorine gas and sulfur hexafluoride gas at a pressure of 45 mTorr, wherein the mass ratio of sulfur hexafluoride gas to chlorine gas was 1:30.

[0049] 20% of the thickness of the silicon-containing thin film layer was etched away by oxygen gas and carbon tetrafluoride gas at a pressure of 45 mTorr, wherein the mass ratio of oxygen gas and carbon tetrafluoride gas was 1:5, and the over-etching amount was 10%.

[0050] 10% of the thickness of the silicon-containing film layer was etched away by chlorine gas and sulfur hexafluoride gas at a pressure of 45 mTorr, wherein the mass ratio of sulfur hexafluoride gas to chlorine gas was 1:30, and the over-etching amount was 20%.

[0051] Wherein, the above-mentioned dry etching temperature is 20 degrees Celsius.

Embodiment 2

[0053] An embodiment of the present invention provides a dry etching method, including:

[0054] 55% of the thickness of the silicon-containing film layer was etched away by chlorine gas and sulfur hexafluoride gas at a pressure of 30 mTorr, wherein the mass ratio of sulfur hexafluoride gas to chlorine gas was 1:30.

[0055] 30% of the thickness of the silicon-containing thin film layer was etched away by using oxygen gas and carbon tetrafluoride gas at a pressure of 30 mTorr, wherein the mass ratio of oxygen gas and carbon tetrafluoride gas was 1:1.5, and the over-etching amount was 20%.

[0056] Using chlorine gas and sulfur hexafluoride gas at a pressure of 30 mTorr to etch away 15% of the thickness of the silicon-containing thin film layer, wherein the mass ratio of sulfur hexafluoride gas to chlorine gas is 1:20, and the over-etching amount is 15%.

[0057] Wherein, the above-mentioned dry etching temperature is 30 degrees Celsius.

Embodiment 3

[0059] An embodiment of the present invention provides a dry etching method, including:

[0060] 75% of the thickness of the silicon-containing film layer was etched away by chlorine gas and sulfur hexafluoride gas at a pressure of 30 mTorr, wherein the mass ratio of sulfur hexafluoride gas to chlorine gas was 1:20.

[0061] 15% of the thickness of the silicon-containing thin film layer was etched away by using oxygen gas and carbon tetrafluoride gas at a pressure of 30 mTorr, wherein the mass ratio of oxygen gas and carbon tetrafluoride gas was 1:10, and the over-etching amount was 10%.

[0062] 10% of the thickness of the silicon-containing thin film layer was etched away by chlorine gas and sulfur hexafluoride gas at a pressure of 30 mTorr, wherein the mass ratio of sulfur hexafluoride gas to chlorine gas was 1:20, and the over-etching amount was 15%.

[0063] Wherein, the above-mentioned dry etching temperature is 25 degrees Celsius.

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Abstract

The present invention discloses a dry etching method and belongs to the etching process technical field. With the dry etching method of the present invention adopted, etching residues can be removed in the etching process of a silicon-containing thin film layer, damage to other thin film layers can be reduced, and etching quality can be improved. According to the technical schemes of the present invention, the dry etching method comprises the following steps that: the silicon-containing thin film layer is etched by a first predetermined thickness through using a first gas, wherein the first gas contains a chlorine; the silicon-containing thin film layer is etched by a second predetermined thickness through using a second gas, so that etching residues generated in the silicon-containing film layer after the silicon-containing film layer is etched by the first predetermined thickness are eliminated, wherein the second gas contains a fluoride gas; and after the etching residues are eliminated, the silicon-containing film layer is etched by a third predetermined thickness by using the first gas, and the third predetermined thickness is made to be smaller than the first predetermined thickness. The dry etching method of the invention is mainly used for etching a thin film transistor substrate.

Description

technical field [0001] The invention relates to the technical field of etching technology, in particular to a dry etching method. Background technique [0002] In the manufacturing process of the thin film transistor substrate, a dry etching process needs to be adopted. The dry etching process uses plasma generated by a low-pressure gas under a high-frequency electric field to bombard the substrate to perform etching. Specifically, on the one hand, According to the different substrate materials, you can choose the appropriate gas to react with the material to achieve the purpose of etching and removal. On the other hand, you can also use the electric field to guide and accelerate the plasma so that it has a certain kinetic energy. When it bombards When the surface of the substrate is touched, the substances in the substrate will be knocked out, so as to achieve the purpose of physical energy transfer to achieve the purpose of etching. [0003] When the sensor is integrated ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3213
CPCH01L29/6675H01L21/32135H01L21/3213H01L29/786H01L29/66742H01L29/42384
Inventor 刘清召王久石赵磊
Owner BOE TECH GRP CO LTD
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