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Window layer, CdTe thin-film solar cell assembly and preparation method of CdTe thin-film solar cell assembly

A solar cell and window layer technology, applied in the field of solar cells, can solve the problems affecting the open circuit voltage and fill factor of battery components, reduce the intensity of sunlight incident on the absorbing layer, reduce the short circuit current of battery components, etc., and achieve high open circuit voltage and Fill Factor, Transparency Improvement, Open Circuit Voltage and Effect of Fill Factor Improvement

Inactive Publication Date: 2018-01-09
CNBM CHENGDU OPTOELECTRONICS MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Among them, the current CdTe thin film solar cell module uses the CdS layer as the window layer. The CdS material has a small band gap of 2.4eV, so the window layer absorbs part of the visible light before the absorber layer CdTe layer, reducing the incident sunlight intensity on the absorber layer. , to reduce the short-circuit current of battery components and affect the conversion efficiency
In addition, there is a difference in the energy band structure of the CdTe layer and the CdS layer. During the process of electron transmission from the CdTe layer to the CdS layer, there will be a certain surface recombination at the interface between the CdTe layer and the CdS layer, which will affect the open circuit voltage and fill factor of the battery module. , thereby affecting the conversion efficiency

Method used

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  • Window layer, CdTe thin-film solar cell assembly and preparation method of CdTe thin-film solar cell assembly
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preparation example Construction

[0032] The present invention also provides a method for preparing a CdTe thin film solar cell module, comprising: epitaxially growing a transparent conductive film, a window layer, a light absorption layer, a back contact layer and a back electrode layer on a substrate from bottom to top; the window layer for Mg x Cd 1- x S y o 1-y layer, wherein, 0<x<1, 0<y<1; the light absorbing layer is a CdTe layer.

[0033]According to the present invention, preferably, the epitaxial growth method of the window layer is selected from one or more of magnetron sputtering, water bath deposition and thermal diffusion. More preferably, the epitaxial growth method of the window layer is magnetron sputtering, water bath deposition or thermal diffusion.

[0034] According to the present invention, the preparation method further includes: epitaxially growing a barrier layer on the substrate, and the transparent conductive film layer is epitaxially grown on the barrier layer.

[0035] Accordi...

Embodiment 1

[0037] A window layer for Mg x Cd 1-x S y o 1-y layer, wherein 0

[0038] A CdTe thin-film solar cell module, comprising a substrate, characterized in that an epitaxial stack is arranged on the substrate, and the epitaxial stack sequentially includes: a barrier layer, a transparent conductive film, a high resistance layer, In this embodiment, the above-mentioned window layer, light absorbing layer, back contact layer and back electrode layer.

[0039] The substrate described in this embodiment is made of soda-lime glass; the barrier layer is SiO 2 layer; the transparent conductive film is an FTO film layer; the high-resistance layer is a ZnO layer, and the thickness of the high-resistance layer is 50nm; the light-absorbing layer is a CdTe layer; the back contact layer is a ZnTe layer, so The back electrode layer is a Mo / Al / Cr layer. The thickness of the Mo layer in the back electrode layer is 20nm, the thickness of t...

Embodiment 2

[0042] This embodiment is the same as Embodiment 1 except for the following features: the thickness of the window layer is 2 nm.

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Abstract

The invention discloses a window layer, a CdTe thin-film solar cell assembly and a preparation method of the CdTe thin-film solar cell assembly. The window layer is a Mg<x>Cd<1-x>S<y>O<1-y> layer, wherein x is smaller than 1 and greater than 0 and y is smaller than 1 and greater than 0; the solar cell assembly comprises a substrate, wherein the substrate is provided with an epitaxial stack layer;the epitaxial stack layer sequentially comprises a transparent conductive film layer, the window layer, a light absorption layer, a back contact layer and a back electrode layer from bottom to top; and the window layer and the window layer in the CdTe thin-film solar cell assembly are MgO-doped CdS layers, the transparency of the window layers is improved and the intensity of the sunlight irradiating the absorption layer is increased, so that recombination of charge carriers on an interface between the window layer and the absorption layer is reduced; and the CdTe thin-film solar cell assemblyof using the window layer is high in short-circuit current, open-circuit voltage, filling factor and conversion efficiency.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a window layer, a CdTe thin film solar cell component and a preparation method thereof. Background technique [0002] With the gradual depletion of fossil fuels and the increasingly serious environmental pollution caused by the burning of fossil fuels, the promotion and application of new energy has become a global consensus. Solar energy, as the most important renewable energy in new energy, occupies an important position in the future development. Thin-film solar cells mainly include amorphous silicon, CdTe, copper indium gallium selenide and dye-sensitized and other types. Due to the low consumption of materials, there is a consensus that there is a large space for cost reduction. focus on. [0003] Among them, the current CdTe thin film solar cell module uses the CdS layer as the window layer. The CdS material has a small band gap of 2.4eV, so the window layer absorbs p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0296H01L31/073H01L31/18
CPCY02E10/543Y02P70/50
Inventor 彭寿马立云潘锦功殷新建杨少飞
Owner CNBM CHENGDU OPTOELECTRONICS MATERIAL
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