Content address storage unit circuit and writing operation method and storage device thereof

Abstract

The invention provides a content address storage unit circuit and a writing operation method and a storage device thereof. The content address storage unit circuit structurally includes a first transistor, a second transistor, a first memristor, a second memristor, a writing signal line, an input line, a first data line and a second data line, wherein the first transistor, the first memristor andthe second memristor are arranged in series between the first data line and the input line; a connecting point between the first memristor and the second memristor is a first connecting point; one endof the second transistor is connected with the first connecting point, and the other end is connected with the second data line; the writing signal line is connected with the control end of the firsttransistor and the control end of the second transistor separately. By using the circuit structure, the structure of the content storage unit circuit is simplified, and the device number in the content address storage unit circuit is decreased; therefore, the time of the writing operation process is reduced, and the writing operation efficiency is improved.

Description

technical field [0001] The invention relates to electronic circuit technology, in particular to a content address storage unit circuit, a write operation method thereof, and a memory. Background technique [0002] With the development of science and technology, information is growing explosively. In order to complete the storage and fast reading and writing of massive information, it is required that the memory must be denser, smaller, and faster. Content addressable memory (Content Addressable Memory, CAM) is a memory based on RAM (Random Access Memory, random access memory) technology, has a fast retrieval function, and can be used for cache, table lookup, and network address filtering. [0003] Memristor (Memristor, memory resistance) is called the fourth generation of basic passive electronic components. As a nanoscale electronic device, it has the characteristics of small size, low power consumption, and fast reading and writing speed. In order to further improve the p...

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Problems solved by technology

[0005] Aiming at the problems in the above-mentioned prior art that the number of devices is large, the circuit structure and wiring are relatively complex, and the writing operation efficiency is low, the present application provides a content address storage unit circuit, a writing operation method, and a memory

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