Method for detecting content of metal ions in oxidation film on surface of silicon wafer

Abstract

The invention provides a method for detecting the content of metal ions in an oxidation film on the surface of a silicon wafer. The method is characterized in that two same sample wafers are selected; oxidation treatment is carried out on the surface of one sample wafer, so that the sample wafer having the surface coated with an oxidation film can be obtained; the contents of metal ions on the surfaces of the two sample wafers are detected, and the content of the metal ions in the oxidation film can be obtained based on data difference of the two sample wafers. The method provided by the invention is accurate and effective, realizes all-element and ultramicro precision measurement of the metal ions in the oxidation film indeed, provides scientific test data for a process technology for reducing the introduction of metallic element impurities in a whole production process, meets the requirements of manufacturers during semiconductor manufacturing, and plays an active role in improving the ex factory pass rate of products and lowering the cost of semiconductor component manufacturers.

Description

technical field [0001] The invention belongs to the technical field of semiconductor silicon polishing wafer detection, and in particular relates to a method for detecting the content of metal ions in an oxide film on the surface of a silicon wafer. Background technique [0002] In the semiconductor manufacturing industry, the presence of metal impurities will affect the performance of the product. Therefore, the introduction of impurity elements on the surface of the silicon wafer during the entire production process of the silicon wafer may reduce the qualification rate of the electronic component chips in the later stage. Specific pollution problems can lead to different defects in semiconductor devices. For example, pollution of alkali metals and alkaline earth metals (Na, K, Ca, Mg, Ba, etc.) can lead to a decrease in the breakdown voltage of components; transition metals and heavy metals (Fe, Cr, Ni , Cu, Mn, Pb, etc.) pollution can shorten the life of the component, o...

AI Technical Summary

Problems solved by technology

The polished silicon wafer includes a silicon substrate and a silicon dioxide film layer covering the silicon substrate. In the prior art, only the metal content on the surface of the silicon wafer is generally detected as the metal content of the silicon dioxide film layer. In fact, this part It also includes the metal content on the surface of the silicon substrate, which leads to inaccurate values ​​actually detected

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