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An ultraviolet led epitaxial structure

An epitaxial structure, ultraviolet technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low quantum efficiency and low emission power in ultraviolet LEDs, reduce the quantum confinement Stark effect, increase the hole injection rate, The effect of the best luminous performance

Active Publication Date: 2019-08-30
GUANGDONG UNIV OF TECH
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Problems solved by technology

[0006] In view of this, the present invention provides a UV LED epitaxial structure to solve the problem of low internal quantum efficiency and emission power of UV LEDs in the prior art

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Embodiment Construction

[0027] As mentioned in the background section, the internal quantum efficiency and emission power of AlGaN-based ultraviolet LEDs in the prior art are relatively low.

[0028] At present, the main reasons for the low luminous efficiency of AlGaN-based ultraviolet LED light sources are: the low carrier injection efficiency of AlGaN materials with high Al composition, which restricts the improvement of quantum efficiency in ultraviolet LEDs; the structural properties of AlGaN materials with high Al composition determine their light emission low efficiency.

[0029] Based on this, the present invention provides a kind of ultraviolet LED epitaxial structure, it is characterized in that, comprises:

[0030] Substrate;

[0031] An undoped buffer layer, an N-type AlGaN layer, a multi-quantum well structure, a superlattice structure, an electron blocking layer, a P-type AlGaN layer, and a P-type GaN layer are sequentially grown on the substrate;

[0032] Wherein, the superlattice st...

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Abstract

An ultraviolet light-emitting diode (LED) epitaxial structure, comprising: a substrate (1); an undoped buffer layer (2), an N-type AlGaN layer (3), a multi-quantum well structure (4), a superlattice structure (5), an electron blocking layer (6), a P-type AlGaN layer (7), and a P-type GaN layer (8), which are sequentially grown on the substrate (1); the superlattice structure (5) comprises at least one first AlGaN layer and at least one second AlGaN layer, the first AlGaN layer and the second AlGaN layer being alternatingly stacked. Since the superlattice structure (5) is added between the multi-quantum well and the electron blocking layer (6), the superlattice structure (5) may effectively alleviate strain between the last quantum barrier of an active region and the electron blocking layer (6), suppress electron leakage, and increase hole injection rate, thereby improving the optical output power and internal quantum efficiency of an ultraviolet LED, causing the ultraviolet LED to present better light-emitting performance.

Description

technical field [0001] The present invention relates to the technical field of semiconductor optoelectronics, in particular to an ultraviolet LED (Light-Emitting Diode, light-emitting diode) epitaxial structure. Background technique [0002] Ultraviolet (UV) LED is a kind of LED. Compared with traditional gas ultraviolet light sources such as mercury lamps and xenon lamps currently on the market, UV LEDs have a long lifespan, cold light source, no heat radiation, and lifespan is not affected by the number of opening and closing times. , high energy, high uniform irradiation efficiency, no toxic substances and other powerful advantages, making it the most promising to replace the existing ultraviolet high-pressure mercury lamp and become the next generation of ultraviolet light source. [0003] Ultraviolet LEDs have great application value in medical treatment, sterilization, printing, lighting, data storage and secure communication. 365nm is the most typical wavelength in t...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/12H01L33/14H01L33/32
Inventor 何苗黄波王成民周海亮王润
Owner GUANGDONG UNIV OF TECH
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