Semiconductor device

A semiconductor, conductive type technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of increased switching loss, increased carrier concentration on the emitter side, etc., to achieve reduced switching loss, On-state voltage reduction effect

Active Publication Date: 2017-09-26
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, if the IE effect is promoted by this method, the carrier concentration on the emitter side increases
As a result, there is a possibility that carriers are not rapidly discharged to the emitter side at the time of turn-off, and switching loss at the time of turn-off may increase.

Method used

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  • Semiconductor device
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Examples

Experimental program
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Effect test

no. 1 Embodiment approach

[0033] figure 1 (a) is a schematic cross-sectional view showing the semiconductor device according to the first embodiment. figure 1 (b) is a schematic plan view showing the semiconductor device of the first embodiment. exist figure 1 (a), shows along the figure 1 (b) A cross section of line A1-A2.

[0034] figure 1 The semiconductor device 101 shown in (a) is an IGBT having an upper and lower electrode structure. The semiconductor device 101 includes a first electrode (hereinafter, referred to as a collector electrode 11 , for example), a second electrode (hereinafter, referred to as an emitter electrode 12 , for example), a third electrode 13 , a fourth electrode 14 , a fifth electrode 15 , and a third electrode 13 . 1 semiconductor region (hereinafter, referred to as n － type base region 21), second semiconductor region (hereinafter, referred to as p-type base region 22, for example), third semiconductor region (hereinafter, referred to as n, for example, + type emit...

no. 2 Embodiment approach

[0078] Figure 4 It is a schematic cross-sectional view showing the semiconductor device of the second embodiment.

[0079] In the semiconductor device 102 , the length L24 of the p-type semiconductor region 24 is longer than the length L22 of the p-type base region 22 in the Y-axis direction. For example, the length of the A region is 1 μm or more and 6 μm or less. The length of the B region is 2 μm or more and 10 μm or less.

[0080] As a result, at the time of turning off, holes are more quickly discharged to the emitter electrode 12 via the wider p-type semiconductor region 24 . As a result, in the semiconductor device 102 , the switching loss at the time of turn-off is further reduced as compared with the semiconductor device 101 .

no. 3 Embodiment approach

[0082] Figure 5 (a) is a schematic cross-sectional view showing a semiconductor device according to a first example of the third embodiment. Figure 5 (b) is a schematic cross-sectional view showing a semiconductor device according to a second example of the third embodiment.

[0083] exist Figure 5 In the semiconductor device 103A shown in (a), n + The type emitter region 23 is provided on the side of the third electrode 13 and not provided on the side of the fourth electrode 14 . For example, n + The type emitter region 23 is in contact with the first insulating film 31 . n +The type emitter region 23 is not in contact with the second insulating film 32 . In addition, the fourth electrode 14 is electrically connected to the emitter electrode 12 . For example, the fourth electrode 14 is in contact with the emitter electrode 12 .

[0084] In addition, in the Y-axis direction, the p-type base region 22 is arranged in parallel with the p-type semiconductor region 24 wi...

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Abstract

A semiconductor device includes a third electrode between a first semiconductor region and a second electrode, a fourth electrode between the first semiconductor region and the second electrode, a second semiconductor region between the first semiconductor region and the second electrode and between the third electrode and the fourth electrode, a third semiconductor region between the second semiconductor region and the second electrode, a fourth electrode between the first semiconductor region and the second electrode to be electrically connected to the second electrode, and a fifth semiconductor region between the first electrode and the first semiconductor region. A first insulating film is provided between the third electrode and the first semiconductor region, the second semiconductor region, the third semiconductor region and the second electrode. A second insulating film is provided between the fourth semiconductor region and the first semiconductor region, the second semiconductor region, and the fourth semiconductor region.

Description

[0001] Citations to Related Applications [0002] The present application is based on, and seeks to benefit from, the rights of Priority Japanese Patent Application No. 2016-052666 for which it applied on March 16, 2016, the entire contents of which are incorporated herein by reference. technical field [0003] The embodiments described herein generally relate to semiconductor devices. Background technique [0004] One of the semiconductor devices for electric power includes an IGBT (Insulated Gate Bipolar Transistor) having a trench gate structure. In the case where an IGBT is used as a switching element, it is expected that its on-resistance is low and switching is fast. In the IGBT, when the pitch of the trench gates is shortened, the resistance component of the semiconductor region between the trench gates increases, and the so-called IE effect (IE: Injection Enhanced) is promoted. As a result, the on-state voltage thereof is reduced. The IE effect is also promoted by...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06H01L21/331H01L29/423
CPCH01L29/0603H01L29/0684H01L29/42356H01L29/66325H01L29/739H01L29/407H01L29/0696H01L29/083H01L29/7397H01L29/36H01L29/1004H01L29/41708H01L29/0804H01L29/0692H01L29/4236H01L29/0821
Inventor 小仓常雄末代知子
Owner KK TOSHIBA
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