Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Erasure correcting method and apparatus based on flash memory storage device

A flash memory storage and equipment technology, applied in the field of information processing, can solve the problems of high overhead of RAID series, weak error correction ability, large erasure delay, etc., to achieve strong protection ability, low erasure delay, and less resource consumption Effect

Active Publication Date: 2017-09-22
武汉中航通用科技有限公司
View PDF6 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the RAID series either consumes a large amount of overhead, or the error correction capability is not strong.
The erasure code implemented by RS requires more resources to implement, and the erasure delay is very large, generally requiring hundreds of clock cycles.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Erasure correcting method and apparatus based on flash memory storage device
  • Erasure correcting method and apparatus based on flash memory storage device
  • Erasure correcting method and apparatus based on flash memory storage device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0027] see figure 1 , is a schematic diagram of the erasure correction device of the present invention. The device consists of two parts: an encoding module and a decoding module. The encoding module processes 16 input data blocks to obtain two verification data blocks. The decoding module uses the received two verification data blocks to perform erasure correction on the received partial missing data. .

[0028] see figure 2 , is a schematic diagram of the specific encoding process of the present invention.

[0029] The function of the encoding part is to generate 2 check blocks (output) from no more than M=16 blocks of original data (input). In flash memory, each data block is 16KB, but of course other sizes are also possible.

[0030] Wherein, the first data block is obtained by XORing corresponding byte positions of the 16 original data blocks.

[...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an erasure correcting method and apparatus based on a flash memory storage device. The apparatus comprises an encoding module and a decoding module, the encoding module processes 16 input data blocks to obtain two verification data blocks, and the decoding module performs erasure correcting on received partially missing data by using the received two verification data blocks. The erasure correcting ability of the erasure correcting apparatus disclosed by the invention is M + 2, the protection ability of the erasure correcting apparatus is higher than that of the traditional RAID, few resources are occupied, meanwhile the erasure correcting delay is less than that of the traditional RS erasure code, the encoding only requires 2 clock cycles, and the decoding only requires 4 clock cycles. At the same time, breakpoint resume is supported, calculation can be performed without waiting for the preparation of all data blocks, and the data are calculated once arrival, therefore the requirements for the system cache are greatly reduced.

Description

technical field [0001] The present invention relates to the field of information processing, in particular to an erasure correction method and device based on a flash memory storage device. Background technique [0002] Flash storage has high read / write bandwidth and is currently a hotspot in the storage field. However, the characteristics of flash memory itself determine that its bit error rate is much higher than that of ordinary storage. In a flash memory storage unit at the bottom layer, ECC or error correction code technology is generally used to ensure the accuracy of the data in the unit. At a higher level of the system, RAID or erasure codes are usually used to ensure the reliability of system storage. [0003] However, the RAID series either consumes a large amount of overhead, or the error correction capability is not strong. However, the erasure code implemented by RS requires more resources to implement, and the erasure delay is very large, generally requirin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F11/10
CPCG06F11/1068
Inventor 杨珏成刘靖刘胜杰
Owner 武汉中航通用科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com