Floating gate-drain composite field plate vertical power electronic device

Abstract

The invention discloses a vertical power electronic device based on a floating gate-drain composite field plate. The vertical power electronic device comprises a Schottky drain (13), a substrate (1), a drift layer (2), an aperture layer (3), two symmetrical current blocking layers (4), a channel layer (6), a barrier layer (7), a cap layer (8) and a grid (10) from bottom to top; an aperture (5) is formed between the two current blocking layers (4); two sources (12) are deposited at two sides of the barrier layer; two injection areas (11) are below the two sources; a passivation layer (15) wraps all areas, except the bottom of the Schottky drain, wherein a floating gate-drain composite field plate (14) is manufactured in the passivation layer at two sides; the floating gate-drain composite field plate is composed of a gate field plate, a drain field plate, multiple gate floating field plates and multiple drain floating field plates; and a two-stage step structure is adopted in the current blocking layers. The vertical power electronic device disclosed by the invention has high breakdown voltage, simple process, low conduction resistance and high yield, and can be used for power electronic systems.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a semiconductor device, in particular to a floating gate-drain composite field plate vertical power electronic device, which can be used in a power electronic system. [0002] technical background [0003] Power semiconductor devices are the core components of power electronics technology. As energy and environmental issues become increasingly prominent, research and development of new high-performance, low-loss power devices has become one of the effective ways to improve power utilization, save energy, and alleviate energy crises. In the research of power devices, there is a serious restrictive relationship between high speed, high voltage and low on-resistance. Reasonable and effective improvement of this restrictive relationship is the key to improving the overall performance of the device. With the development of microelectronics technology, the performance of traditio...

AI Technical Summary

Problems solved by technology

However, up to now, there is still no precedent of the field plate structure being successfully applied to GaN-based current aperture heterojunction field effect devices at home and abroad. This is mainly due to the inherent defects in the structure of GaN-based current aperture heterojunction field effect devices. As a result, the strongest electric field peak in the device drift layer is located near the interface between the current blocking layer and the aperture layer, and the electric field peak is far away from the surfaces on both sides of the drift layer, so the field plate structure can hardly play the role of effectively modulating the electric field distribution in the device, even in GaN The field plate structure is used in the base current aperture heterojunction field effect device, and there is almost no improvement in device performance

[0009] In addition, the existing GaN-based current aperture heterojunction field effect devices all use ohmic drains. When a very low reverse voltage is applied to the device drain, the current blocking layer in the device will fail, forming a large drain-source Leakage current, and as the drain reverse voltage increases, the device gate will also open forward, and a large gate current will pass, eventually leading to device failure

Therefore, none of the existing GaN-based current aperture heterojunction field effect devices can realize the reverse blocking function. break feature has no effect

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