Method of improving cold resistance of anthurium andraeanum by using external source putrescine

A technology of cold resistance and putrescine, applied in the field of flower cultivation, to achieve the effect of ensuring product quality, improving physiological metabolism level, and improving cold resistance

Inactive Publication Date: 2017-09-08
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no report on the mature technology of anthurium by adding an appropriate concentration of exogenous putrescine to the nutrient solution to improve the cold resistance of anthurium

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] This example provides a method of applying exogenous putrescine in order to improve the cold resistance of Anthurium anthurium.

[0013] The Anthurium seedling age that the present embodiment adopts is 4 months, carries out potting with the flowerpot that diameter is 9cm; By weight, cultivation substrate is 3 parts of coconut shell blocks: 2 parts of potted peat: 1 part of perlite. The nutrient supply frequency of Anthurium seedlings is 2 times a week, once with 1 / 2 Hoagland nutrient solution, and once with 1 / 2 Hoagland nutrient solution added with 0.5mmol·L -1 exogenous putrescine. Exogenous putrescine is an analytically pure reagent, which is accurately weighed and mixed into the diluted nutrient solution to irrigate the roots of Anthurium seedlings. The time to add exogenous putrescine was 2 months, and after 2 months, the nutrient supply was changed to once a week, 2 / 3 Hoagland nutrient solution. Cultivated under greenhouse conditions, 26°C during the day and 20°C...

Embodiment 2

[0016] According to the technical scheme of embodiment 1, add 0.5, 1.0, 1.5 and 2.0mmol L in 1 / 2 Hoagland nutrient solution respectively -1 Exogenous putrescine was applied to Anthurium seedlings, and the effects of different treatment methods on Anthurium physiological indicators and nitrogen metabolism at low temperature were observed. In this example, anthurium seedlings without exogenous putrescine were used as a control, and the addition of 0.5, 1.0, 1.5, 2.0mmol·L -1 Anthurium seedlings cultivated with exogenous putrescine for 2 months were placed together in an incubator at 6°C, light intensity 6000lux, RH85%, light time 12h / d for 3 days, and the roots and leaves of Anthurium were immediately taken for physiological indicators Determination, compared with normal temperature cultivation and CK (low temperature), the effect on the antioxidant enzyme activity and root system activity of Anthurium root system after 6°C low temperature stress for 3 days, the results are show...

Embodiment 3

[0025] According to the technical scheme of embodiment 1, add 0.5, 1.0, 1.5 and 2.0mmol L in 1 / 2 Hoagland nutrient solution respectively -1 The application of exogenous putrescine in Anthurium seedlings is carried out. This example provides the appearance performance of Anthurium seedlings in different treatment methods to recover growth. The results are shown in Table 4.

[0026] Table 4 Appearance of Anthurium seedlings recovering growth

[0027] .

[0028] It can be seen from Table 4 that the anthurium seedlings added with exogenous putrescine recovered better after the end of the low temperature, and there was no phenomenon of leaf wilting and falling off after 4 weeks of observation records. Although the anthurium seedlings without exogenous putrescine did not show obvious damage symptoms at the end of the low temperature, they showed obvious leaf wilting and shedding during the recovery growth process in the later stage, indicating that the control anthurium seedlings...

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Abstract

The invention discloses a method of improving cold resistance of anthurium andraeanum by using external source putrescine. The method comprises the following steps of: supplying nutrients to an anthurium andraeanum seedling potted in a culture medium, the seedling age of which is 4 months in a greenhouse condition according to a supply frequency of two times per week, wherein a 1/2 Hoagland nutritional solution is added one time, and a 0.5-2.0mmol/L putrescine nutritional solution is added into the 1/2 Hoagland the other time; and irrigating the nutritional solutions to the root of the anthurium andraeanum for supplementing external source putrescine, and continuously supplementing the external source putrescine for 2 months. The method disclosed by the invention for anthurium andraeanum culture can improve the physiological metabolic level at a low temperature. After low temperature culture, the leaves do not wither and fall. The anthurium andraeanum can normally grow and develop in a conventional environment at the culture temperature of 3 DEG C, so that the product quality is ensured. According to the technical scheme, purposes of improving the cold resistance of the anthurium andraeanum and reducing the energy consumption of winter production of the anthurium andraeanum are achieved.

Description

technical field [0001] The invention relates to the technical field of flower cultivation, in particular to a method for improving the cold resistance of Anthurium anthurium by using exogenous putrescine. Background technique [0002] Anthurium ( Anthurium andraeanum ) is a perennial herbaceous plant of the genus Anthurium in the family Araceae. Because of its evergreen leaves all year round, bright flowers and long viewing period, it has become an important ornamental plant for indoor environments in winter and spring. In recent years, it has become one of the most sold varieties of Chinese New Year Flowers and one of the best-selling potted plants in the international market. [0003] Anthurium is native to the tropical rain forests of Central and South America. The natural growth environment is high temperature and humid, and the low temperature of winter cultivation cannot be lower than 12°C. Therefore, in most areas of my country, only facility cultivation can be used,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): A01G1/00A01G13/00C05G3/00
CPCA01G13/00C05D9/00C05G3/00C05F5/002C05F11/02
Inventor 孙向丽王波谈建中
Owner SUZHOU UNIV
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