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Extended interaction klystron and production method thereof

A technology of extended interaction and klystrons, applied in the field of extended interaction klystrons, which can solve the problems of high power density in the cavity, low power density in the cavity, high output performance, etc., achieve high output performance and reduce the risk of breakdown , the effect of high modulation efficiency

Active Publication Date: 2017-08-18
NORTHWEST INST OF NUCLEAR TECH
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Problems solved by technology

[0007] In order to solve the problems of the existing extended interaction klystron with very narrow working frequency band and high power density in the cavity, the present invention proposes an extended interaction klystron with a non-uniform resonant cavity structure and its manufacturing method. The working frequency band of the interactive klystron, the power density in the cavity is low, and the output performance is high

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  • Extended interaction klystron and production method thereof
  • Extended interaction klystron and production method thereof
  • Extended interaction klystron and production method thereof

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Embodiment Construction

[0053] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0054] This embodiment takes the 0.34THz extended interaction klystron as an example, from figure 2 It can be seen that the extended interaction klystron of this embodiment includes 5 resonant cavities, namely input resonant cavity 1, three intermediate resonant cavities 2 and output resonant cavity 3, and the cross-sections of all resonant cavities are equal in area Dumbbell-shaped structure ( image 3 ), the longitudinal section dimension is at Figure 4 to Figure 8 given in. The length of the drift section 7 connecting two adjacent resonators is 0.6mm, the operating voltage of the electron beam is 16kV, the operating current is 0.4A, and the guiding magnetic field adopts a uniform magnetic field with a strength of 0.8T.

[0055] from image 3 It can be seen that the width W1 of all resonant cavities is 0.7mm, and the width W2 of the mid...

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Abstract

The invention belongs to the field of high-performance terahertz radiation sources, and provides an extended interaction klystron and a production method thereof. The extended interaction klystron comprises an input resonant cavity, an output resonant cavity, and N intermediate resonant cavities. The input resonant cavity is communicated with an input waveguide. The output resonant cavity is communicated with an output waveguide. Electron beam channels communicated with one another are arranged at the centers of the input resonant cavity, the output resonant cavity and the N intermediate resonant cavities. The cycle lengths of the resonant clearances of the N intermediate resonant cavities are different or partially different. N is a positive integer greater than 1. The problem that the existing extended interaction klystron has a very narrow working band and high in-cavity power density is solved. An electron beam is tuned by different resonant frequencies when passing through the intermediate resonant cavities. Thus, the working bandwidth of the whole device is improved.

Description

technical field [0001] The invention belongs to the field of high-performance terahertz radiation sources, and in particular relates to an extended interaction klystron used for generating high-power terahertz radiation and a manufacturing method thereof. Background technique [0002] Terahertz (THz) wave refers to the frequency from 0.3THz to 3THz (1THz=10 12 Hz), electromagnetic waves between millimeter waves and infrared light, this is the last frequency band that humans have not yet fully recognized and utilized. Terahertz waves are located in the transition region from macroscopic classical theory to microscopic quantum theory. Due to their special location, their radiation has unique advantages such as strong permeability, high resolution, non-ionization propagation, and rich spectral characteristics. These characteristics of terahertz wave make it have great application potential in information communication, medical diagnosis, biotechnology, material science, astron...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J25/11H01J9/00
CPCH01J9/00H01J25/11
Inventor 李爽王建国王东阳王光强
Owner NORTHWEST INST OF NUCLEAR TECH
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