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Manufacturing method for solid-state plasma diode equipped with table-shaped active region and used for preparing holographic antenna

A technology of holographic antenna and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, antenna, antenna parts and other directions to achieve the effect of good device performance

Inactive Publication Date: 2017-08-15
XIAN CREATION KEJI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, most of the current research is limited to gaseous plasma antennas, and the research on solid-state plasma antennas is almost blank.

Method used

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  • Manufacturing method for solid-state plasma diode equipped with table-shaped active region and used for preparing holographic antenna
  • Manufacturing method for solid-state plasma diode equipped with table-shaped active region and used for preparing holographic antenna
  • Manufacturing method for solid-state plasma diode equipped with table-shaped active region and used for preparing holographic antenna

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Embodiment 1

[0058] See image 3 , image 3 It is a flowchart of a method for manufacturing a solid-state plasma diode in a table-shaped active region of a holographic antenna according to an embodiment of the present invention. The method is suitable for preparing a holographic antenna, and the solid-state plasma diode is mainly used for making a solid-state plasma antenna. The method comprises the steps of:

[0059] (a) select SOI substrate;

[0060] Among them, for step (a), the reason for using SOI substrate is that solid-state plasma antennas require good microwave characteristics, and solid-state plasma diodes need to have good carriers, that is, solid-state plasmas, in order to meet this requirement. capability, while silicon dioxide (SiO 2 ) can confine carriers, that is, solid-state plasma, in the top layer silicon, so SOI is preferably used as the substrate of solid-state plasma diodes.

[0061] (b) using a CVD process to form a first protective layer on the surface of the SO...

Embodiment 2

[0101] See Figure 4a-Figure 4s , Figure 4a-Figure 4s It is a schematic diagram of another manufacturing method of a solid-state plasma diode with a mesa-shaped active region for preparing a holographic antenna according to an embodiment of the present invention. The solid-state plasma diode in the area is taken as an example to describe in detail, and the specific steps are as follows:

[0102] S10, selecting an SOI substrate.

[0103] See Figure 4a , the crystal orientation of the SOI substrate 101 is (100), in addition, the doping type of the SOI substrate 101 is p-type, and the doping concentration is 10 14 cm -3 Yes, the thickness of the top Si layer is, for example, 20 μm.

[0104] S20, depositing a layer of silicon nitride on the surface of the SOI substrate.

[0105] See Figure 4b A silicon nitride layer 201 is deposited on the SOI substrate 101 by using a chemical vapor deposition (Chemical vapor deposition, CVD for short) method.

[0106] S30, etching the ...

Embodiment 3

[0142] Please refer to Figure 5 , Figure 5 It is a schematic diagram of another device structure of a solid-state plasma diode in a mesa-shaped active region for preparing a holographic antenna according to an embodiment of the present invention. The solid state plasma diode employs the above as image 3 made by the fabrication method shown. Specifically, the solid-state plasma diode is prepared and formed on the SOI substrate 301, and the P region 303, the N region 304 of the pin diode, and the I region laterally located between the P region 303 and the N region 304 are all located on the SOI substrate within the top layer of silicon 302 .

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Abstract

The invention relates to a manufacturing method for a solid-state plasma diode equipped with a table-shaped active region and used for preparing a holographic antenna. The manufacturing method comprises the steps of (a), selecting an SOI substrate; (b), etching the SOI substrate to form the table-shaped active region; (c), performing P type Si material and N type Si material deposition on the periphery of the table-shaped active region by adopting an in-situ doping process to form a P region and an N region respectively; (d), depositing a polycrystal Si material on the periphery of the table-shaped active region; and (e), manufacturing leads on the surface of the polycrystal Si material and performing photoetching of PAD to form the solid-state plasma diode. According to the embodiments, the high-performance solid-state plasma diode, equipped with the table-shaped active region and applicable to formation of the holographic antenna, can be prepared and provided by adopting the in-situ doping process.

Description

technical field [0001] The invention relates to the technical field of semiconductor device manufacturing, in particular to a method for manufacturing a solid-state plasma diode in a table-shaped active region for preparing a holographic antenna. Background technique [0002] Due to its relatively large weight and volume, the traditional metal antenna is inflexible in design and manufacture, and its self-reconfiguration and adaptability are poor, which seriously restricts the development and performance improvement of radar and communication systems. Therefore, in recent years, the theory of antenna broadband, miniaturization, and reconfiguration and multiplexing has become increasingly active. [0003] Against this background, the researchers proposed a new antenna concept-plasma antenna, which is a radio-frequency antenna that uses plasma as a guiding medium for electromagnetic radiation. The plasma antenna can change the instantaneous bandwidth of the antenna by changing...

Claims

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Application Information

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IPC IPC(8): H01Q1/22H01Q1/36H01L21/329H01L29/868
CPCH01Q1/2283H01L29/6609H01L29/868H01Q1/36
Inventor 尹晓雪张亮
Owner XIAN CREATION KEJI CO LTD
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