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Controllable preparation method for realizing self-assembled nano-flowers of p-type laminar gallium telluride nano-sheets

A nanoflower, gallium telluride technology, applied in chemical instruments and methods, selenium/tellurium compounds, metal selenide/telluride, etc., can solve the problems of difficult controllable preparation of GaTe nanomaterials, and achieve obvious pn junction rectification effect. , Good photoelectric catalytic hydrogen production effect, overcoming the effect of easy recombination

Inactive Publication Date: 2017-08-08
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The problem to be solved by the present invention is to overcome the difficult and controllable preparation problem of GaTe nanometer material

Method used

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  • Controllable preparation method for realizing self-assembled nano-flowers of p-type laminar gallium telluride nano-sheets
  • Controllable preparation method for realizing self-assembled nano-flowers of p-type laminar gallium telluride nano-sheets
  • Controllable preparation method for realizing self-assembled nano-flowers of p-type laminar gallium telluride nano-sheets

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Embodiment 1

[0036] A method for the controllable preparation of large-area p-type layered GaTe nanosheet self-assembled nanoflowers under normal pressure, comprising the steps of:

[0037] The first step is to clean the sapphire wafer and quartz boat. First, put a sapphire substrate with a size of 1×1cm, a thickness of 0.5mm, and a surface roughness of 0.2nm into a beaker filled with 50ml of ethanol, perform ultrasonic cleaning for 15 minutes, and take it out and blow it dry with a nitrogen gun; Next, put the dried sapphire substrate into another beaker containing 50 ml of acetone, perform ultrasonic cleaning for 15 minutes, take it out and dry it with a nitrogen gun; finally put the dried sapphire substrate into 100 ml of deionized In water, perform ultrasonic cleaning for 10 minutes, take it out and dry it with a nitrogen gun.

[0038] In the second step, the sapphire substrate is annealed. The sapphire substrate cleaned up in the first step is directly put into the double-temperatur...

Embodiment 2

[0049] A method for the controllable preparation of large-area p-type layered GaTe nanosheet self-assembled nanoflowers under normal pressure, comprising the steps of:

[0050] The first step is to clean the sapphire wafer and quartz boat. First, put a sapphire substrate with a size of 1×1cm, a thickness of 0.5mm, and a surface roughness of 0.2nm into a beaker filled with 50ml of ethanol, perform ultrasonic cleaning for 15 minutes, and take it out and blow it dry with a nitrogen gun; Next, put the dried sapphire substrate into another beaker containing 50 ml of acetone, perform ultrasonic cleaning for 15 minutes, take it out and dry it with a nitrogen gun; finally put the dried sapphire substrate into 100 ml of deionized In water, perform ultrasonic cleaning for 10 minutes, take it out and dry it with a nitrogen gun.

[0051] In the second step, the sapphire substrate is annealed. The sapphire substrate cleaned up in the first step is directly put into the double-temperatur...

Embodiment 3

[0058] A method for the controllable preparation of large-area p-type layered GaTe nanosheet self-assembled nanoflowers under normal pressure, comprising the steps of:

[0059] The first step is to clean the sapphire wafer and quartz boat. First, put a sapphire substrate with a size of 1×1cm, a thickness of 0.5mm, and a surface roughness of 0.2nm into a beaker filled with 50ml of ethanol, perform ultrasonic cleaning for 15 minutes, and take it out and blow it dry with a nitrogen gun; Next, put the dried sapphire substrate into another beaker containing 50 ml of acetone, perform ultrasonic cleaning for 15 minutes, take it out and dry it with a nitrogen gun; finally put the dried sapphire substrate into 100 ml of deionized In water, perform ultrasonic cleaning for 10 minutes, take it out and dry it with a nitrogen gun.

[0060] In the second step, the sapphire substrate is annealed. The sapphire substrate cleaned up in the first step is directly put into the double-temperatur...

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Abstract

The invention discloses a method for controllably preparing self-assembled nano-flowers of p-type laminar gallium telluride nano-sheets under normal pressure. The method comprises the following process steps: a) preparing one layer of ZnO thin film with a nano-flower shape on a sapphire substrate and taking the ZnO thin film as a seed layer in a growth process of GaTe; b) putting a prepared precursor sample into a tubular furnace and forming the GaTe in a normal-pressure and high-purity argon gas environment; c) testing a synthesized material by utilizing characterization methods including a scanning tunneling microscope, Raman, photoluminescence, an atomic force microscope, a transmission electron microscope and the like. The shape of the GaTe gallium is controlled through the shape and growth conditions including time length, argon gas flow, temperature and the like of ZnO; the preparation of ZnO nano-flowers is controlled through adjusting conditions including gas flow, temperature and the like. The method is efficient and the synthesis is controllable; a heterojunction structure of the prepared GaTe / ZnO nano-flowers has a remarkable pn junction rectifying effect and can be used for producing hydrogen through photoelectric catalysis and the like; furthermore, the reference is also provided for the growth of a novel two-dimensional material GaTe.

Description

technical field [0001] The invention relates to the field of preparation of nanomaterials, in particular to a controllable preparation method for realizing the self-assembly of p-type layered GaTe nanosheets into nanoflowers. Background technique [0002] II-VI direct bandgap semiconductor zinc oxide (ZnO) has a hexagonal wurtzite structure, its forbidden band width is 3.37eV, and the exciton binding energy at room temperature is as high as 60meV, which is much greater than the thermal energy at room temperature (26meV). Important materials have become a new hotspot in the research of short-wavelength semiconductor laser materials and devices after GaN. [0003] In addition, ZnO materials have unique optical, electrical, and acoustic properties at the nanoscale, and the current preparation technology of zinc oxide is very mature, so a large number of researchers are interested in composite materials of zinc oxide and other excellent nanomaterials. On the other hand, graphen...

Claims

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Application Information

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IPC IPC(8): C04B41/45C01B19/00C01G9/03B01J27/057
CPCC01B19/007C01G9/03C04B41/4531B01J27/0576C01P2002/72C01P2002/82C01P2004/04C01P2004/03C01P2004/01C01P2006/60C01P2006/40B01J35/39
Inventor 陈祖信楚盛
Owner SUN YAT SEN UNIV
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