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Nand-flash storage array Mapping management method

A storage array and management method technology, applied in the field of high-speed and large-capacity storage, can solve the problems of very strict storage device capacity and read/write rate, time-consuming, etc., and achieve the goals of reducing the amount of erasure, simplifying the update speed, and improving the update speed Effect

Inactive Publication Date: 2017-08-04
JINAN INSPUR HIGH TECH TECH DEV CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the fields of radar and aerospace, the requirements for storage device capacity and read / write rate are very strict, and a single NAND FLASH cannot meet the requirements, so NAND FLASH arrays are particularly necessary
But with the increase of NAND FLASH storage array, the Mapping table is also getting bigger and bigger. It will be very time-consuming if the Mapping table is updated every time.

Method used

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  • Nand-flash storage array Mapping management method

Examples

Experimental program
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Embodiment

[0017] The Nand-flash storage array Mapping management method described in this embodiment, according to the wrong NAND FLASH row, column position to erase and update the specific position of NOR FLASH, it mainly includes the following steps: initially scan bad blocks, power-on loading and update Bad block three steps.

[0018] The step of initially scanning for bad blocks mainly refers to reading the initial bad block information in each NAND FLASH in the NAND FLASH array through parallel pipeline to form an initial Mapping table.

[0019] In the step of initial scanning of bad blocks, the address data of each NAND FLASH in the NAND FLASH array that records the factory bad block information is sequentially read to determine whether it is a factory bad block, and an initial Mapping table is formed, which is stored in different locations of NOR FLASH.

[0020] The step of power-on loading mainly means that when the system is powered on, the Mapping table information in the NOR ...

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Abstract

The invention discloses a Nand-flash storage array Mapping management method, and relates to the field of high-speed mass storage. NOR-FLASH is mainly adopted to store BLOCK addresses which are used normally by a NAND-FLASH array, erasing and updating are conducted on the NOR-FLASH aiming at operation errors which occur on different NAND-FLASH of the NAND-FLASH array respectively, and erasing and updating are conducted on a specific location of the NOR-FLASH according to the row and column locations of the error NAND-FLASH. The Nand-flash storage array Mapping management method comprises the steps of initial scanning of bad blocks, power-on loading and updating of the bad blocks. By the adoption of the Nand-flash storage array Mapping management method, the Mapping updating speed in the storage array is simplified, and the updating speed is improved.

Description

technical field [0001] The invention relates to the field of high-speed and large-capacity storage, in particular to a Nand-flash storage array Mapping management method. Background technique [0002] Nand-flash memory is a kind of solid-state large-capacity memory of flash memory, which uses a nonlinear macrocell mode inside. Nand-flash memory has the advantages of large capacity and fast rewriting speed, and is suitable for the storage of large amounts of data, so it has been more and more widely used in the industry. For example, embedded products include digital cameras, MP3 walkman memory cards, volume Small U disk, etc. [0003] In the fields of radar and aerospace, the capacity and read / write speed requirements of storage devices are very strict, and a single NAND FLASH cannot meet the requirements, so the NAND FLASH array is particularly necessary. However, with the increase of NAND FLASH storage arrays, the Mapping table is also getting larger and larger, and it...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/02
CPCG06F12/0246
Inventor 尹超赵鑫鑫李朋姜凯
Owner JINAN INSPUR HIGH TECH TECH DEV CO LTD
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