Apparatus and method for producing lateral HEMT

Abstract

An apparatus (100, 200, 300, 400) including a lateral HEMT is provided. The lateral HEMT comprises at least one buffer layer (101, 201, 301, 401) on which another semiconductor layer (102, 202, 302, 402) is arranged. A first electrode (103, 203, 303, 403), a grid electrode (104, 204, 304, 404) and a second electrode (105, 205, 305, 140) are arranged on the second semiconductor layer (102, 202, 302, 402). The apparatus is characterized in that a first field plate (109, 209, 309, 409) is arranged below the buffer layer (101, 201, 301, 401), and the first field plate (109, 209, 309, 409) is at least partially abutted against the buffer layer (101, 201, 301, 401).

Description

technical field [0001] The present invention relates to an apparatus and a method for manufacturing a lateral HEMT. Background technique [0002] HEMT (High-electron-mobility Transistoren) through, for example, aluminum gallium nitride / gallium nitride (AiGaN / GaN) or indium gallium nitride (InGaN) or aluminum nitride / gallium nitride (AlN / GaN) Heterostructures are deposited by deposition on substrates such as sapphire, silicon carbide (SiC) or silicon (Si). In this case, the deposition of GaN on Si results in a high load in the growing GaN layer due to the large lattice mismatch between Si and GaN. Furthermore, silicon is mechanically unstable at the typical temperatures for GaN growth, typically in the range of 1000 to 1200° C. In order to reduce this load, doped silicon having a face-centered cubic lattice structure with {111} planes is used for the deposition of GaN for the production of such HEMT transistors. A disadvantage here is that high substrate leakage currents o...

AI Technical Summary

Problems solved by technology

A disadvantage here is that the thermal coupling of the rear side of the semiconductor to, for example, a printed circuit board or a sheet metal is worse, since a partially removed substrate is arranged between the heat-conducting coupling body and the semiconductor, which makes the heat dissipation of the component worse.

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