Semiconductor structure and formation method thereof
A semiconductor and fin technology, which is applied in the field of semiconductor structure and its formation, can solve the problems of poor resistance performance in the active area of FinFET, and achieve the effect of improving performance
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0030] The resistance performance of the FinFET active region formed in the prior art is poor, and the reason thereof is analyzed in combination with the formation method of the FinFET semiconductor structure in the prior art. The forming method includes the following steps:
[0031] providing a substrate on which fins protruding from the substrate are formed, the fins including a first fin for forming a device and a second fin for forming an active region resistor; After the first fin and the second fin are formed, an isolation layer is formed on the surface of the substrate to cover part of the sidewall surfaces of the first fin and the second fin; A shielding oxide layer is formed on the surface of the second fin, and a threshold voltage adjustment doping process is performed on the first fin; the shielding oxide layer is removed, and a dummy gate oxide layer is formed on the surfaces of the first fin and the second fin and a dummy gate electrode layer to form a dummy gate...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com