Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

mems device, mems temperature sensor and respective manufacturing methods

A manufacturing method and device technology, applied in the field of MEMS temperature sensors and MEMS devices, can solve the problems of high cost, increased cantilever beam root fracture, complex structure of MEMS temperature sensors, etc., and achieve the effect of avoiding breakage

Active Publication Date: 2019-09-27
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF11 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] For the cantilever beam structure, since its length is much greater than the height and width of the beam section, if the mass block is added, the cantilever beam will have a large disturbance and there is a risk of root fracture
In addition, the existing cantilever beam has a one-piece structure, which also increases the risk of cantilever root fracture
[0006] Second: the existing MEMS temperature sensor has complex structure, high cost and low sensing sensitivity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • mems device, mems temperature sensor and respective manufacturing methods
  • mems device, mems temperature sensor and respective manufacturing methods
  • mems device, mems temperature sensor and respective manufacturing methods

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0078] As mentioned in the background art, the performance of MEMS devices and MEMS temperature sensors in the prior art needs to be improved and the structure needs to be simplified. In order to solve the above technical problems, the present invention provides MEMS devices and manufacturing methods thereof, MEMS temperature sensors and manufacturing methods thereof to solve them.

[0079] Specifically, for the MEMS device, a folded structure is added to the connection between the fixed part and the movable part of the cantilever beam to strengthen the connection of the movable part of the cantilever beam to prevent it from breaking.

[0080] For the MEMS temperature sensor, a strain gauge with a different thermal expansion coefficient is placed on the lower surface of the cantilever beam movable part, so that during the measurement process, the cantilever beam movable part is warped and deformed due to the difference in thermal expansion coefficient and the strain gauge, and ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an MEMS (Micro-Electro-Mechanical-System) device and a manufacturing method thereof so as to improve the reliability of a cantilever beam of the existing MEMS device, and relates to an MEMS temperature sensor and a manufacturing method thereof so as to improve the process and structure of the existing MEMS temperature sensor. For the MEMS device, a zigzag structure is additionally arranged at a connecting part of a movable portion and a fixed portion of the cantilever beam, and the connecting part is reinforced so as to avoid the connecting part from being broken. For the MEMS temperature sensor, the lower surface or the upper surface of the movable portion of the cantilever beam is provided with a strain gauge with the thermal expansion coefficient being different from that of the movable portion of the cantilever beam, so that the movable portion of the cantilever beam is warped and deformed in the measuring process because the thermal expansion coefficient is different from that of the strain gauge, capacitance between the movable portion of the cantilever beam and a fixed electrode changes, and thus the temperature is detected.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a MEMS device, a MEMS temperature sensor and their manufacturing methods. Background technique [0002] Since the late 1980s, with the development of Micro-Electro-Mechanical-System (MEMS) technology, various sensors, such as acceleration sensors and temperature sensors, have been miniaturized. Due to the use of MEMS processing technology, the basic MEMS sensor has realized mass production, overcomes the shortcomings of the original sensor such as large size and high cost, and has become the main direction of future development. [0003] However, existing MEMS devices also have some problems. [0004] One: the current MEMS sensor usually adopts capacitive sensing, and the capacitive sensor generally includes a fixed electrode and a movable sensitive element (generally called a movable electrode) that changes capacitance with the fixed electrode. In MEMS sensors, the mova...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G01K5/48B81C1/00B81B3/00
Inventor 阮炯明张冬平
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com