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Three-dimensional point cloud model-based monocrystalline silicon rod boundary dimension measurement method

A single crystal silicon rod, three-dimensional point cloud technology, applied in the direction of measuring devices, image data processing, instruments, etc., can solve the problems of troublesome processing procedures, easy deviation of measurement from the real value, etc., achieve efficient quality assurance, realize automatic measurement, complex low degree of effect

Inactive Publication Date: 2017-06-20
TIANJIN UNIV
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Problems solved by technology

Due to the complexity of the shape of the surface of the single crystal silicon rod, the measurement is easy to deviate from the true value, which brings unnecessary troubles to the subsequent processing procedures

Method used

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  • Three-dimensional point cloud model-based monocrystalline silicon rod boundary dimension measurement method
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  • Three-dimensional point cloud model-based monocrystalline silicon rod boundary dimension measurement method

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[0041] (1) if figure 2 As shown, perpendicular to the height direction (y-coordinate direction) of the three-dimensional point cloud model of the single crystal silicon rod, the point cloud is layered at intervals of 4 mm. The y coordinate value of the i-th layer y i 2mm+i×4mm, the y coordinate is in y i The points within the range of ±2mm belong to the same layer of contour point cloud, and a total of N layers of contour line point cloud are obtained. After this processing, it is considered that the contour line point cloud of the same layer has the same y coordinate.

[0042] (2) image 3 is the contour point cloud of the i-th layer, and the geometric center coordinates of the contour point cloud of this layer are calculated by formula (1), where M i is the number of points in the contour line of this layer, (x j ,z j ) is any point in the contour point cloud of this layer. The calculated center coordinates (x cen,i ,z cen,i )Such as image 3 Indicated by the cent...

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Abstract

The invention relates to a three-dimensional point cloud model-based monocrystalline silicon rod boundary dimension measurement method. The method includes the following steps that: point cloud is layered along a direction perpendicular to the direction of the axis of a monocrystalline rod three-dimensional point cloud model, altogether N layers are obtained; the geometric central point of the cross-section profile point cloud of each layer is calculated; straight line fitting is performed on the N geometric central points, so that the geometric central axis of the monocrystalline silicon rod can be obtained; a distance from any one point in the monocrystalline silicon rod three-dimensional point cloud model to the geometric central axis is calculated; and the difference value of the maximum y-coordinate and minimum y-coordinate in the single-crystal silicon rod three-dimensional point cloud model is the height value of the monocrystalline silicon rod. With the three-dimensional point cloud model-based monocrystalline silicon rod boundary dimension measurement method of the invention adopted, errors caused by the complexity and diversity of the surface shape of the monocrystalline silicon rod and manual measurement in which a worker performs measurement by using tools such as a vernier caliper can be eliminated. The method provided by the present invention has the advantages of simplicity, easiness in implementation, low complexity, high accuracy and easiness in data storage and transmission. With the method adopted, automatic measurement can be realized, the efficiency and precision of the boundary dimension measurement of the single-crystal silicon rod can be improved, and quality assurance can be provided for monocrystalline silicon sheet production.

Description

technical field [0001] The invention relates to a method for measuring the external dimension of a single crystal silicon rod. In particular, it relates to a method for measuring the outer dimension of a single crystal silicon rod based on a three-dimensional point cloud model. Background technique [0002] The process of processing single crystal silicon rods into single crystal silicon polished silicon wafers mainly includes cutting, outer diameter rolling, flat edge or V-groove processing and slicing. After the cutting process, the two sections of the single crystal silicon rod are flat and parallel to each other, but the surface shape of the single crystal silicon rod obtained by single crystal growth has large fluctuations and uneven diameters, so the single crystal silicon rod needs to be processed before outer diameter rolling The rod is measured to obtain the thinnest diameter value of the silicon rod, so as to predict whether the single crystal silicon rod can be p...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06T7/62G06T7/66G06T7/60G01B21/20G01B21/10
CPCG01B21/10G01B21/20G06T7/60G06T2207/10028G06T2207/30148
Inventor 田庆国
Owner TIANJIN UNIV
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