Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing stannic oxide nanocrystalline thin film with honeycomb structure by using hydrothermal method

A technology of nano-crystals and tin oxide, which is applied in the direction of coating, etc., can solve the problems of low purity of tin oxide thin film materials, difficult shape, high cost, etc., and achieve the effects of easy control, simple operation, and low energy consumption

Inactive Publication Date: 2017-06-20
JIUJIANG UNIVERSITY
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to solve the above problems, the object of the present invention is to overcome the disadvantages of tin oxide thin film material components such as low purity of tin oxide film materials prepared by some methods in the past, difficulty in controlling the shape, and high cost. Tin oxide nanocrystals grow on the surface of FTO conductive glass sheet to obtain tin oxide film material with large specific surface area

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing stannic oxide nanocrystalline thin film with honeycomb structure by using hydrothermal method
  • Method for preparing stannic oxide nanocrystalline thin film with honeycomb structure by using hydrothermal method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] First, clean the surface of the FTO conductive glass sheet with deionized water and put it into the reaction kettle. Add the prepared tin tetrachloride solution with a concentration of 0.01mol / L into the beaker, add distilled water, and stir until the concentration is 0.04mol / L. Drop the sodium hydroxide solution in the beaker containing the tin tetrachloride solution to form a white slurry, keep the pH value of the slurry at 9, continue stirring for 1 hour, pour the slurry in the beaker into the FTO conductive glass Put the reaction kettle into the oven, raise the temperature of the oven to 200°C and keep it warm for 5 days, take out the FTO conductive glass piece and wash it with distilled water for 3 times, then wash it with absolute ethanol once, and dry it. A tin oxide nanocrystal thin film material with a honeycomb structure is prepared. as attached figure 2 The front and back comparison diagrams (scanning electron micrographs) of the shown FTO glass sheet surfa...

Embodiment 2

[0016] First, clean the surface of the FTO conductive glass sheet with deionized water and put it into the reaction kettle. Add the prepared tin tetrachloride solution with a concentration of 1mol / L into the beaker, add distilled water, stir, and oxidize the solution with a concentration of 4mol / L. The sodium solution is dripped into the beaker containing the tin tetrachloride solution to form a white slurry, and the pH value of the slurry is maintained at 9, and the stirring is continued for 0.5 hours, and the slurry in the beaker is poured into the reaction reaction of the FTO conductive glass sheet. put the reaction kettle into an oven, raise the temperature of the oven to 200°C and keep it warm for 7 days, take out the FTO conductive glass sheet and wash it with distilled water for 3 times, then wash it with absolute ethanol once, and dry it to obtain a Tin oxide nanocrystal thin film material with honeycomb structure.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for preparing a stannic oxide nanocrystalline thin film with a honeycomb structure by using a hydrothermal method. The method specifically comprises the following steps of firstly, cleaning the surface of an FTO (fluorine-doped tin oxide) conductive glass sheet by deionized water, putting into a reaction kettle, adding a prepared stannic chloride solution with concentration of 1.0 to 0.01mol / L into a beaker, adding distilled water, and stirring; dripping a sodium hydroxide solution into the beaker loaded with the stannic chloride solution, so as to form a white slurry, wherein the mole number of the sodium hydroxide solution is equal to four times of mole number of stannic chloride; maintaining the pH (potential of hydrogen) value of the slurry to 9, continuing to stir for 0.5 to 3h, and pouring the slurry in the beaker into the reaction kettle loaded with the FTO conductive glass sheet; putting the reaction kettle into an oven, increasing the temperature in the oven to 200 DEG C, and performing heat preservation for 1 to 7 days; fetching out the FTO conductive glass sheet, cleaning for three times by the distilled water, cleaning for one time by absolute ethyl alcohol, and drying, so as to obtain the stannic oxide nanocrystalline thin film with the honeycomb structure. The method has the advantages that the operation is simple and convenient, the control is easy, and the energy consumption is low; the stannic oxide nanocrystalline thin film can be prepared.

Description

technical field [0001] The invention belongs to film materials and preparation methods thereof, and relates to an inorganic film with a special structure and a preparation method thereof, in particular to a process for preparing tin oxide film materials with a honeycomb structure by a hydrothermal method. Background technique [0002] When the one-dimensional linear scale of a solid or liquid is much smaller than the other two dimensions, we call such a solid or liquid a membrane. Generally, the film can be divided into two categories, one is the film with a thickness greater than 1 micron, called thick film; the other is the film with a thickness of less than 1 micron, called thin film. Thin film technology has a wide range of applications, such as computer storage devices, pharmaceuticals, manufacturing thin film batteries, dye-sensitized solar cells, etc. [0003] In the study of fuel-sensitized solar cell photoanode materials, SnO 2 Has a ratio of TiO 2 , ZnO higher c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/34
CPCC03C17/3417C03C17/002C03C17/006C03C2217/425C03C2217/70C03C2217/94
Inventor 宋杰光王秀琴王芳李世斌夏婷婷余洪
Owner JIUJIANG UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products