Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Improved voltage controlled memristor simulator

A simulator, an improved technology, applied in the direction of single-port active network, etc., can solve the problems of high cost, difficult to widely use, etc., and achieve the effect of simple structure

Inactive Publication Date: 2017-06-16
CHANGZHOU UNIV
View PDF2 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing memristive physical devices require high cost both in terms of technology and cost, which makes it difficult for them to be widely used in the short term.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Improved voltage controlled memristor simulator
  • Improved voltage controlled memristor simulator
  • Improved voltage controlled memristor simulator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] Mathematical modeling: A magnetron (voltage-control) memristive model described by a smooth continuous cubic nonlinear function can be expressed as

[0019]

[0020] In the formula, a and b are constants. is the memconductor of the magnetic control (voltage control) memristor, namely

[0021]

[0022] An improved voltage-controlled memristor simulator of this embodiment is constructed as figure 1 shown. main to figure 2 The existing ideal magnetron memristor simulator has been improved in two points: 1) the original resistance realized by the current inverter "-R c ” direct replacement for the resistor “R c ", which simplifies the circuit structure; 2) Parallel resistor "R" on the integral capacitor b ”, avoiding the DC voltage drift of the integrator.

[0023] First, to avoid loading effects, connect the signal input a to the operational amplifier U a A voltage follower circuit is formed, and the voltage at the output terminal b is denoted as v b , then...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an improved voltage controlled memristor simulator comprising two operational amplifiers Ua and Ub, two multipliers M1 and M2, a capacitor C0 and three resistors Ra, Rb and Rc. The first operational amplifier Ua forms a voltage following circuit and is used for avoiding the load effect. The second operational amplifier Ub is connected with the resistor Ra and the capacitor C0 to form an integrator circuit so as to realize integral operation, and the resistor Rb is used for avoiding DC voltage drift of the integrator. The multipliers are used for multiplication operation of voltage signals and finally form voltage difference at the two ends of the resistor Rc. The current flowing through the resistor Rc is current flowing through the memristor simulator. The improved voltage controlled memristor simulator has no current inverter and no DC voltage drift and is simple in structure and simple in experimental observation and can be used as a new memristor simulator to be applied to different chaotic circuits to generate chaotic signals.

Description

technical field [0001] The invention relates to an improved voltage-controlled memristor simulator, which is composed of discrete components such as an operational amplifier, an analog multiplier, a capacitor and a resistor, and realizes a novel generalized memristor. Background technique [0002] In 1971, Professor Cai Shaotang of the University of California, Berkeley theoretically predicted the existence of the fourth basic circuit element, memristor, except resistance, inductance and capacitance. In 2008, researchers at Hewlett-Packard Labs successfully produced physical devices of memristors based on metals and metal oxides, and published this result in the famous journal "Nature", which aroused great repercussions. Due to the unique nonlinear characteristics of memristors, it has great application prospects in the fields of nonlinear circuits and chaotic signal generation. However, the existing memristive physical devices require high cost both in terms of technology ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03H11/46
Inventor 包伯成王宁武花干陈墨王将
Owner CHANGZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com