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A ring-cavity nanowire electrical injection single photon source device

A single photon source, nanowire technology, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of difficult preparation, small structure size in short-wave band, and poor compatibility between photonic crystal microcavity and electric injection device structure. , to achieve the effect of enhancing radiation efficiency, improving directionality, and improving light collection and utilization efficiency

Inactive Publication Date: 2019-02-22
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the photonic crystal microcavity is not compatible with the structure of the electrical injection device, and its structural size is small for short-wavelength bands, and it is difficult to make a large one; the DBR microcavity can only confine light in one dimension in the vertical direction, and it requires quantum dots to emit light The wavelength is precisely aligned with the resonance wavelength of the DBR cavity, resulting in a high-quality DBR microcavity suitable for electrical pumping that requires high epitaxy equipment and is difficult to prepare

Method used

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  • A ring-cavity nanowire electrical injection single photon source device
  • A ring-cavity nanowire electrical injection single photon source device
  • A ring-cavity nanowire electrical injection single photon source device

Examples

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Embodiment 1

[0027] An AlGaN / GaN ring cavity nanowire electrical injection single photon source based on graphene transparent p-type electrodes. like figure 1 , 2 As shown, among them: 1 is graphene transparent p-type electrode; 2 is p-AlGaN / i-AlGaN / GaN-Qdot / i-AlGaN / n-AlGaN nanowire; 3 is GaN embedded in pin AlGaN nanowire Quantum dots; 4 is a multilayer concentric ring cavity composed of AlGaN and spin-on-coated glass (SOG), and the thickness of the concentric ring cavity is a quarter of the equivalent wavelength; 5 is an n-type electrode composed of Pt / Au; 6 is n-type AlGaN epitaxial material; 7 is an AlN substrate. This structure consists of a Bragg grating composed of multi-layer concentric ring cavities to limit the photons diverging in the two spatial dimensions of the vertical nanowire, and only emit single photons along the two ends of the nanowire, which has good directionality, and the concentric ring microcavity The increase of photon density in the localized state greatly in...

Embodiment 2

[0031] An InGaAs / InAs ring cavity nanowire electrical injection single photon source based on Ti / Au highly reflective p-type electrodes. like figure 1 , 2 As shown, among them: 1 is Ti / Au highly reflective p-type electrode; 2 is p-InGaAs / i-InGaAs / InAs / i-InGaAs / n-InGaAs nanowire; 3 is InAs embedded in pin InGaAs nanowire Quantum dots; 4 is Al 2 o 3 The thickness of the concentric ring cavity is a quarter of the equivalent wavelength; 5 is an n-type electrode composed of Ni / Au; 6 is an n-type InGaAs epitaxial material; 7 is a GaAs substrate. This structure consists of a Bragg grating composed of multilayer concentric ring cavities to confine photons diverging in the two spatial dimensions of the vertical nanowire, and a Ti / Au highly reflective p-type electrode confines photons diverging along the p-type end of the nanowire, so that only along the nanowire The supersubstrate at one end of the line n-type emits single photons downwards, and the increase of local state photon d...

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Abstract

The invention discloses a ring cavity nano-wire electric injection single-photon source device. The ring cavity nano-wire electric injection single-photon source device is characterized by comprising a p type electrode, a pin nano-wire, a quantum dot embedded into the nano-wire, a multilayer concentric ring cavity, an n type electrode, an n type material and a substrate. The device has the advantages that while electric injection work is achieved, an annular Bragg micro-cavity composed of multilayer concentric rings is utilized, an electromagnetic field is generated at the concentric quantum dot position, and the local area is enhanced; the radiation efficiency of a quantum dot single-photon source can be enhanced through a Purcell effect, divergence of photons can be limited in two spatial dimensions vertical to the nano-wire, the single photons can be emitted only in the nano-wire direction, the single photons are easily coupled with optical fibers, and the light collecting and utilizing efficiency is greatly improved. The ring cavity nano-wire electric injection single-photon-source device can be widely applied to quantum information, quantum computing, quantum authentication and quantum precision measurement relevant fields.

Description

technical field [0001] The invention relates to the fields of single photon sources, semiconductor micro-nano photonic devices, and quantum information, and specifically refers to a ring-cavity nanowire electrical injection single-photon source device. technical background [0002] Single photon source is not only an important part of quantum information processing, quantum secure communication, quantum linear optical computing and quantum cryptography, but also has important application value in the fields of micro absorption measurement, ultra-high sensitivity magnetic field measurement, bioluminescent labeling and imaging. Among many single-photon emission generation schemes, the single-photon source based on quantum dots has great advantages in all aspects compared with other single-photon sources, such as narrow spectral line width, high oscillator intensity, and no photofading. Or flickering, small time jitter, high repetition frequency, emission band can cover various...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/10
CPCH01L33/06H01L33/10
Inventor 陈飞良李沫黄锋张晖李倩王旺平康健彬李俊泽张健
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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