Ring cavity nano-wire electric injection single-photon source device
A single photon source, nanowire technology, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of difficult preparation, small structure size in the short-wave band, and poor compatibility between photonic crystal microcavities and electrical injection devices. , to achieve the effect of enhancing radiation efficiency, improving directionality, and improving light collection and utilization efficiency
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Embodiment 1
[0028] An AlGaN / GaN ring cavity nanowire electrical injection single photon source based on graphene transparent p-type electrodes. Such as figure 1 , 2 As shown, among them: 1 is graphene transparent p-type electrode; 2 is p-AlGaN / i-AlGaN / GaN-Qdot / i-AlGaN / n-AlGaN nanowire; 3 is GaN embedded in pin AlGaN nanowire Quantum dots; 4 is a multilayer concentric ring cavity composed of AlGaN and spin-on-coated glass (SOG), and the thickness of the concentric ring cavity is a quarter of the equivalent wavelength; 5 is an n-type electrode composed of Pt / Au; 6 is n-type AlGaN epitaxial material; 7 is an AlN substrate. This structure consists of a Bragg grating composed of multi-layer concentric ring cavities to limit the photons diverging in the two spatial dimensions of the vertical nanowire, and only emit single photons along the two ends of the nanowire, which has good directionality, and the concentric ring microcavity The increase of photon density in the localized state greatly...
Embodiment 2
[0032] An InGaAs / InAs ring cavity nanowire electrical injection single photon source based on Ti / Au highly reflective p-type electrodes. Such as figure 1 , 2 As shown, among them: 1 is Ti / Au highly reflective p-type electrode; 2 is p-InGaAs / i-InGaAs / InAs / i-InGaAs / n-InGaAs nanowire; 3 is InAs embedded in pin InGaAs nanowire Quantum dots; 4 is Al 2 o 3 The thickness of the concentric ring cavity is a quarter of the equivalent wavelength; 5 is an n-type electrode composed of Ni / Au; 6 is an n-type InGaAs epitaxial material; 7 is a GaAs substrate. This structure consists of a Bragg grating composed of multilayer concentric ring cavities to confine photons diverging in the two spatial dimensions of the vertical nanowire, and a Ti / Au highly reflective p-type electrode confines photons diverging along the p-type end of the nanowire, so that only along the nanowire The supersubstrate at one end of the line n-type emits single photons downwards, and the increase of local state photo...
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