A wide-spectrum flexible infrared detector array and its manufacturing method

An infrared detector and a manufacturing method technology, which are applied to semiconductor devices, electric solid-state devices, radiation control devices, etc., can solve the problems of fixed structure, small detection spectral range, inability to adjust the shape and visible range, and achieve uniform thickness, Simple, detailed effects

Active Publication Date: 2019-06-07
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Based on the above technical problems, the present invention provides a wide-spectrum flexible infrared detector array, thereby solving the technical problems of the previous infrared detectors with fixed structure, inability to adjust the shape and visible range, and the detection spectral range is small

Method used

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  • A wide-spectrum flexible infrared detector array and its manufacturing method
  • A wide-spectrum flexible infrared detector array and its manufacturing method
  • A wide-spectrum flexible infrared detector array and its manufacturing method

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specific Embodiment

[0052] Such as figure 1 As shown, a wide-spectrum flexible infrared detector array includes a flexible substrate layer, a supporting silicon wafer layer, and a sensitive film layer glued together from bottom to top; wherein, the upper and lower surfaces of the sensitive film layer are respectively covered with a layer of metal aluminum The film is used as the upper and lower electrodes, and the overlapping area of ​​the upper and lower electrodes constitutes an effective sensitive unit; the sensitive film layer is composed of a flexible pyroelectric polymer; the flexible pyroelectric polymer is polyvinylidene fluoride-hexafluoropropylene ;

[0053] The specific manufacturing method of the wide-spectrum flexible infrared detector array of this embodiment is as follows:

[0054] 1. Mix PVDF (polyvinylidene fluoride) and PHFP (polyhexafluoropropylene) powder with a mass ratio of 85:15; dissolve the mixture in dimethylformamide (DMF) solution, and the mass ratio of solute to solven...

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Abstract

The invention relates to a wide-spectrum flexible infrared detector array, which comprises a flexible substrate layer, a supporting silicon chip layer and a sensitive thin film layer arranged sequentially from bottom to top; the upper and lower surfaces of the sensitive thin film layer have a layer of metal thin film as the upper and lower surfaces respectively. The lower electrode and the overlapping area of ​​the upper and lower electrodes form an effective sensitive unit; the sensitive thin film layer is made of flexible pyroelectric polymer; meanwhile, a manufacturing method of the wide-spectrum flexible infrared detector array is also disclosed. The structure of the present invention can be flexibly deformed, and its deformation amount can be adjusted according to needs, so as to adjust its visible range, and the sensitive film has a wide spectral response range and a large detection spectral range, so the infrared detector based on this array has a higher Imaging effects with richer quality and details.

Description

technical field [0001] The invention relates to an infrared detector, which belongs to the technical field of micro-electromechanical technology. More specifically, the invention relates to a wide-spectrum flexible infrared detector array and a manufacturing method thereof. Background technique [0002] The infrared detector (Infrared Detector) is a device that converts the incident infrared radiation signal into an electrical signal output. Infrared radiation is electromagnetic waves with wavelengths between visible light and microwaves, which cannot be detected by the human eye. To detect the existence of this radiation and measure its strength, it must be transformed into other physical quantities that can be detected and measured. Generally speaking, any effect caused by infrared radiation irradiating an object can be used to measure the intensity of infrared radiation as long as the effect can be measured and is sensitive enough. Modern infrared detectors mainly use i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/144H01L31/18
CPCH01L27/1443H01L27/1446H01L31/18Y02P70/50
Inventor 黎威志李航陈金华李方圆太惠玲于贺蒋亚东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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