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Temperature sensing diode structure integrated on transistor and its preparation method

A diode and transistor technology, applied in the field of temperature sensing diode structure and its preparation, can solve the problems of incomplete compatibility of transistor technology, increase of production cost, complex structure of power semiconductor modules, etc., and achieve improved anti-interference ability, reliability and safety work, to avoid the effect of inductance effect

Active Publication Date: 2018-12-21
MACMIC SCIENCE & TECHNOLOGY CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

On the other hand, the polycrystalline thin film diode also needs to be connected to the transistor through an internal circuit, resulting in a complex structure of the power semiconductor module, and it is not fully compatible with transistor processes such as IGBT and MOSFET, which increases the production cost

Method used

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  • Temperature sensing diode structure integrated on transistor and its preparation method
  • Temperature sensing diode structure integrated on transistor and its preparation method
  • Temperature sensing diode structure integrated on transistor and its preparation method

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Embodiment Construction

[0044] see figure 1 , 2 As shown, in the temperature sensing diode structure integrated on the transistor of the present invention, the active area of ​​the silicon wafer 1 is sequentially connected with a first oxide layer 6 and a first polysilicon layer 8 on the upper part thereof, and the first oxide layer 6 As the isolation layer 6-2 of the polysilicon gate 8-2, the first polysilicon layer 8 is the polysilicon gate 8-2 of the transistor, and the silicon chip 1 has a first dopant connected to the silicon chip 1 in the source cell of the active area. The doped region 3 and the second doped region 2 connected in the first doped region 3, the emitter 12 is connected to the first doped region 3 and the second doped region 2, and the gate 13 is connected to the polysilicon gate 8-2 , And the first polysilicon layer 8 is processed as the first doped region 8-3 of the diode of the present invention. The upper part of the first polysilicon layer 8 is sequentially connected with the s...

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Abstract

The invention relates to a temperature sensing diode structure integrated on a transistor and a preparation method thereof; the upper portion of a first polysilicon layer is connected with a second oxide layer and an insulation dielectric layer; the second oxide layer has an isolation portion isolating a diode zone and an annular isolation portion; the annular isolation portion can isolate the first polysilicon layer in the diode zone so as to form a diode first doping zone and an isolation protection ring separated from each other; the isolation protection ring is not closed; a diode second doping zone with an arced periphery is connected in the diode first doping zone so as to form a transverse PN junction; the first and second electrodes of the diode are connected with corresponding first and second doping zones of the diode; a protection electrode penetrates the insulation dielectric layer and is connected with the isolation protection ring on the first polysilicon layer; the protection electrode is connected with the first electrode so as to form equipotential. The temperature sensing diode structure is reasonable in structure, can detect the transistor chip temperature in real time, can prevent external current, voltage and electric field changes from affecting the temperature sensing diode, and can reduce the production cost.

Description

Technical field [0001] The invention relates to a temperature sensing diode structure integrated on a transistor and a preparation method thereof, and belongs to the technical field of transistor manufacturing. Background technique [0002] High-current, high-power power semiconductor modules are increasingly used in the automotive field, and it is necessary to take protective measures such as over-temperature, over-current, and over-voltage for insulated gate bipolar transistors (IGBT) or field effect transistors (MOSFET). It is necessary to integrate the IGBT or MOSFET with the temperature sensor. The integrated temperature sensor can effectively detect the temperature of the module and chip in real time, so as to protect the device in time. At present, most power semiconductor modules package temperature-sensitive components and IGBT or MOSFET chips in the same module. The temperature-sensitive components detect the temperature of the circuit and convert the temperature signa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/34H01L29/739H01L21/331G01K7/01
Inventor 王培林井亚会戚丽娜张景超刘利峰赵善麒
Owner MACMIC SCIENCE & TECHNOLOGY CO LTD
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