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GaN-ZnO solid solution nanowire and preparation method and application thereof

A nanowire and solid solution technology, applied in chemical instruments and methods, crystal growth, from chemically reactive gases, etc., can solve problems such as large grain size, limited photocatalyst solar spectral response range, and many crystal defects

Active Publication Date: 2017-03-29
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The main reasons are: ① In this method, ZnO, Ga 2 o 3 Requires first reaction to form ZnGa 2 o 4 intermediate, and then nitridated by ammonia gas to form GaN-ZnO solid solution, resulting in the molar ratio of ZnO in the solid solution cannot exceed 33%, which limits the solar spectrum response range of the photocatalyst; Irregular particles on the micron scale have problems such as huge grain size, uneven element distribution, and excessive crystal defects, which are extremely unfavorable for the separation and transmission of photogenerated charges.

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  • GaN-ZnO solid solution nanowire and preparation method and application thereof
  • GaN-ZnO solid solution nanowire and preparation method and application thereof
  • GaN-ZnO solid solution nanowire and preparation method and application thereof

Examples

Experimental program
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Embodiment 1

[0079] The preparation process of GaN-ZnO solid solution nanowires in this embodiment is as follows:

[0080] (1) By mass ratio GaN:Ga 2 o 3 :ZnO is 1:1:6, respectively weigh 62.5mg GaN, 62.5mg Ga 2 o 3 and 375mgZnO, after mixing and grinding evenly, the first raw material is obtained and put into a quartz boat;

[0081] (2) Take 50mg ZnO and 50mg graphite respectively by mass ratio ZnO:graphite is 1:1, after mixing and grinding uniformly, obtain the second raw material, place in another quartz boat;

[0082] It can be seen that the ratio of the total mass of the first raw material to the total mass of the second raw material is 5:1;

[0083] (3) Put the quartz boat with the first raw material, the quartz boat with the second raw material, and the silicon wafer substrate with the gold film deposited on the surface into a small quartz tube (30 cm in length and 2 cm in diameter) with one end sealed and one end open. In the process, the quartz boat containing the first raw m...

Embodiment 2

[0094] Except that step (1) is different, other preparation methods and conditions are the same as in Example 1.

[0095] Step (1) of the present embodiment is:

[0096] (1) By mass ratio GaN:Ga 2 o 3 :ZnO is 1:1:10, weigh 41.6mg GaN, 41.6mg Ga 2 o 3 and 416.8mg ZnO, after mixing and grinding uniformly, the first raw material is obtained, which is put into a quartz boat.

[0097] It is easy to know that the ratio of the total mass of the first raw material to the total mass of the second raw material in this embodiment is 5:1.

[0098] The mole percentage of ZnO in the GaN-ZnO solid solution nanowires obtained on the substrate in this embodiment is 84%.

[0099] The morphology and structure of the GaN-ZnO solid solution nanowires prepared in this example are the same as those in Example 1. The solid solution nanowires are uniform in size, with an average diameter of 50 nm to 150 nm and a length of 5 μm to 50 μm; good crystallization and no structural defects.

[0100] ...

Embodiment 3

[0102] Except that the content of each component in the first raw material in step (1) is different, other preparation methods and conditions are the same as in Example 1.

[0103] Step (1) is in the present embodiment:

[0104] (1) By mass ratio GaN:Ga 2 o 3 : ZnO is 1:1:10, respectively weigh 37.5mg GaN, 37.5mg Ga 2 o 3 and 375mg of ZnO, after mixing and grinding evenly, the first raw material was obtained and put into a quartz boat.

[0105] It can be seen that the ratio of the total mass of the first raw material to the total mass of the second raw material is 4.5:1.

[0106] The morphology and structure of the GaN-ZnO solid solution nanowires prepared in this embodiment Example 1, the solid solution nanowires are uniform in size, with an average diameter of 50 nm to 150 nm and a length of 5 μm to 50 μm; good crystallization and no structural defects.

[0107] The mole percentage of ZnO in the GaN-ZnO solid solution nanowires obtained on the substrate in this embodime...

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Abstract

The invention discloses a GaN-ZnO solid solution nanowire and a preparation method and application thereof. The GaN-ZnO solid solution nanowire is 50-150nm in average diameter and 5-50micron in length, and the molar content of ZnO is 15-95%. The method includes: mixing GaN, Ga2O3 and ZnO powder, and adding into a container; mixing ZnO and graphite powder, and adding into another container; putting the two containers and a substrate into a small quartz tube with one end closed and one end open, putting the small quartz tube into a large quartz tube, vacuumizing, heating and feeding a carrier gas and nitrogen to obtain the solid solution nanowire growing on the substrate. The method is simple, reaction parameters are easy to control, the prepared GaN-ZnO solid solution nanowire is uniform in size, great in crystallization and excellent in performance in application as a catalyst to solar photocatalytic water splitting for hydrogen production, and the maximum hydrogen production rate reaches 1.3mmol.h<-1>.g<-1>.

Description

technical field [0001] The invention belongs to the field of semiconductor materials and nanotechnology, and relates to a solid solution nanowire, a preparation method and its application, in particular to a GaN-ZnO solid solution nanowire, a preparation method and its use in photocatalytic decomposition of water to produce hydrogen, and to construct a photodetector , solar cells and nano-lasers and other optoelectronic devices. Background technique [0002] The design and development of high-performance semiconductor photocatalysts is the key to realize high-efficiency solar photocatalytic water splitting to hydrogen production, thereby solving energy and environmental problems. Nowadays, with the rapid development of nanotechnology, designing and preparing nanostructured semiconductor photocatalysts, taking advantage of the excellent performance of the material size into the nanometer scale, and enhancing the efficiency of its solar photocatalytic water splitting to produc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/10C30B29/62C30B25/00C25B11/06C25B1/04
CPCC25B1/04C30B25/005C30B29/10C30B29/62C25B11/069Y02E60/36
Inventor 宫建茹张凯亚瑟·阿巴斯
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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