Nanocrystalline magnetic ring device

A technology of nanocrystals and magnetic rings, applied in the direction of switch devices, circuit devices, switch devices, etc., can solve the problems of low reliability, unsatisfactory suppression effect, complex structure, etc., achieve high reliability, improve electric field distribution, The effect of simple structure

Active Publication Date: 2017-03-15
YUNNAN POWER GRID CO LTD ELECTRIC POWER RES INST
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a nanocrystalline magnetic ring device to solve the problems of complex structure, low reliability and unsatisfactory suppression effect existing in the existing suppression VFTO technology

Method used

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  • Nanocrystalline magnetic ring device

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Embodiment Construction

[0029] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0030] Such as figure 1 As shown, it is a preferred embodiment of a nanocrystalline magnetic ring device provided by the present invention. The nanocrystalline magnetic ring device is fixed on the gas-insulated closed switchgear 7, including: a nanocrystalline magnetic ring string 1, a protective shell 2 , shielding cover 3 and insulating part 4;

[0031] The gas-insulated and enclosed switchgear 7 is provided with the nanocrystalline magnetic ring string 1, wh...

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Abstract

The invention discloses a nanocrystalline magnetic ring device, which is fixed on a gas-insulated enclosed switchgear and comprises a nanocrystalline magnetic ring string, a protective shell, a shielding case and insulating parts, wherein the gas-insulated enclosed switchgear is sleeved with the nanocrystalline magnetic ring string; the nanocrystalline magnetic ring string comprises a plurality of nanocrystalline magnetic rings; the nanocrystalline magnetic rings are closely arranged along the axial direction of the gas-insulated enclosed switchgear; two adjacent nanocrystalline magnetic rings are connected through a first bonding layer; the protective shell sleeves the outside of the nanocrystalline magnetic ring string; the inner diameter of the protective shell is equal to the outer diameter of the nanocrystalline magnetic ring string; the shielding case is connected with the protective shell through a second bonding layer; the insulating parts are arranged at two ends of the magnetic ring string; and the insulating parts are connected with the adjacent nanocrystalline magnetic rings through the first bonding layer. The nanocrystalline magnetic ring device is simple in structure, low in cost and high in reliability; manual operation is not needed; and the amplitude and the steepness of VFTO can be effectively suppressed.

Description

technical field [0001] The invention relates to the technical field of overvoltage protection, in particular to a nanocrystalline magnetic ring device. Background technique [0002] Gas Insulated Switchgear (GIS for short) has the advantages of small footprint, high reliability, good safety, short installation period, and convenient maintenance. Therefore, GIS is an important part of China's power grids at all levels. [0003] Very Fast Transient Overvoltage (VFTO for short) caused by the operation of the disconnector is one of the main causes of GIS failure. During the operation of the isolating switch, multiple arc restrikes or pre-breakdowns will occur between the fractures, and each arc restrike will generate a certain amplitude of transient overvoltage, and the transient overvoltage will travel along the fracture of the isolating switch. Transmission on both sides, after multiple refraction and reflection, VFTO with higher amplitude is formed, and the research shows th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02B13/035H02H9/04H01F7/02
CPCH01F7/021H02B13/035H02H9/045
Inventor 高凡夫谭向宇马仪王科彭晶陈先富张少泉刘红文刘光祺何顺郭晨鋆
Owner YUNNAN POWER GRID CO LTD ELECTRIC POWER RES INST
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