Method for preparing metal membrane resistor packaging material
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A technology of metal film resistors and packaging materials, applied in non-adjustable metal resistors, resistors, resistor shells/packaging shells/potting, etc., can solve the problem that metal film resistors are easily eroded by water vapor , to achieve the effect of good water vapor permeability resistance
Inactive Publication Date: 2017-01-25
安徽斯迈尔电子科技有限公司
View PDF4 Cites 0 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
[0003] Metal film resistors are easily corroded by water vapor, especially in hot and humid environmental conditions, and high-quality packaging materials must be relied on to ensure the stability of the resistor.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Examples
Experimental program
Comparison scheme
Effect test
specific Embodiment 1
[0012] A preparation method of a metal film resistor packaging material, the specific preparation steps are:
[0013] (1) Put alumina with a particle size of 5nm in an ethanol solution for 20 minutes and then heat the solution to 50°C;
[0014] (2) Add styrene to the solution heated in step (1), stir for 10 minutes, and sonicate for 5 minutes;
[0015] (3) Add phenolic resin particles to the solution in step (2), heat the solution to 50°C and stir for 40 minutes.
specific Embodiment 2
[0017] A preparation method of a metal film resistor packaging material, the specific preparation steps are:
[0018] (1) Put the alumina with a particle size of 10nm into the ethanol solution and sonicate for 30 minutes, then heat the solution to 60°C;
[0019] (2) Add styrene to the solution heated in step (1), stir for 15 minutes, and sonicate for 10 minutes;
[0020] (3) Add phenolic resin particles to the solution in step (2), heat the solution to 60°C and stir for 60 minutes.
specific Embodiment 3
[0022] A preparation method of a metal film resistor packaging material, the specific preparation steps are:
[0023] (1) Put the alumina with a particle size of 8nm into the ethanol solution and sonicate for 25 minutes, then heat the solution to 55°C;
[0024] (2) Add styrene to the solution heated in step (1), stir for 13 minutes, and sonicate for 8 minutes;
[0025] (3) Add phenolic resin particles to the solution in step (2), heat the solution to 55°C and stir for 50 minutes.
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
PUM
Login to view more
Abstract
The invention discloses a method for preparing a metal membrane resistor packaging material. The method specifically comprises the following steps: (1) performing ultrasonic treatment on alumina of which the particle size is 5-10 nm in an ethanol solution for 20-30 minutes, and further heating the solution to 50-60 DEG C; (2) adding styrene into the solution heated in the step (1), stirring for 10-15 minutes, and performing ultrasonic treatment for 5-10 minutes; and (3) further adding phenolic resin granules into the solution of the step (2), heating the solution to 50-60 DEG C, and stirring for 40-60 minutes. The method has the beneficial effects that the alumina and phenolic resin are dispersed into the solution by using heating and ultrasonic methods, and the formed packaging material is good in vapor permeation resistance.
Description
technical field [0001] The invention relates to the technical field of packaging material preparation, in particular to a preparation method of a metal film resistor packaging material. Background technique [0002] Metal film resistors are a type of film resistors. It adopts high-temperature vacuum coating technology to tightly adhere nickel-chromium or similar alloys to the surface of the ceramic rod to form a film. After cutting and adjusting the resistance value to achieve the final required precision resistance value, it is then cut with appropriate joints and coated on its surface. The packaging material is sealed and protected. Because it is a leaded resistor, it is convenient for manual installation and maintenance, and is used in most household appliances, communications, and instruments. [0003] However, metal film resistors are easily corroded by water vapor, especially in hot and humid environmental conditions, and high-quality packaging materials must be reli...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to view more 
Login to view more