Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Non-volatile memory erasing and writing control method and circuit

A non-volatile, control circuit technology, applied in the non-volatile memory erasing and writing control circuit, the non-volatile memory erasing and writing control field, can solve the problem of non-optimal performance, and achieve the effect of improving the erasing and writing performance.

Active Publication Date: 2020-01-10
SHANGHAI HUAHONG INTEGRATED CIRCUIT
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

And this set of parameters must be guaranteed to be valid for all storage units within the effective service life, so although the operation is convenient, it is not optimal in terms of performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Non-volatile memory erasing and writing control method and circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] combine figure 1 As shown, the non-volatile memory erasing control circuit in the following embodiments includes: a main control circuit, a comparison circuit, a cache circuit, a read memory logic circuit, and an erase memory logic circuit.

[0020] Since the erasing and writing time and the erasing and writing current required by each memory unit are not the same, in order to improve the overall performance, the non-volatile memory erasing and writing control circuit adds several bits to each memory unit for storing each Erase and write parameters corresponding to the memory cell, that is, the erase and write time and the erase and write current.

[0021] When the main control circuit receives the erasing start signal sent by the system, the main control circuit sends a write enable signal, and the data to be erased and the erasing parameter (the erasing parameter used for the previous erasing and writing) are written into the buffer circuit; then Follow these steps t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an erase control method for a nonvolatile memory. The erase control method comprises the following steps: when the nonvolatile memory needs to be erased, catching data to be erased and an erase parameter; reading the erase parameter stored in a storage unit to be erased from the storage unit to be erased; erasing the storage unit according to the read erase parameter; reading back just erased data and an erase parameter, and comparing the just erased data and the erase parameter with the data to be erased and the erase parameter which are cached; if a data comparison result is inconsistent with an erase parameter comparison result, adding an erase parameter, and continuously erasing the storage unit according to the new erase parameter till the data comparison result is consistent with the erase parameter comparison result. The invention further discloses an erase control circuit for the nonvolatile memory. The erase control method and the erase control circuit can effectively improve the erase performance of the nonvolatile memory.

Description

technical field [0001] The invention relates to the field of non-volatile memory, in particular to a control method for erasing and writing of the non-volatile memory. The invention also relates to a control circuit for erasing and writing the non-volatile memory. Background technique [0002] For non-volatile memory, the current required for erasing and writing is often three to four orders of magnitude larger than the current required for reading, and the time required for erasing and writing is also three to four orders of magnitude greater than the time required for reading. For different memory cells corresponding to the same non-volatile memory, the required erasing and writing time and erasing and writing current are also different, and may differ by more than one order of magnitude. Moreover, as the number of times of use increases, the circuit of the memory unit will age, thus requiring a longer erasing time and erasing current. Since some memory cells have more e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/14
Inventor 王吉健
Owner SHANGHAI HUAHONG INTEGRATED CIRCUIT
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com