Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Phototransistor based on gesn material and fabrication method thereof

A technology of phototransistor and manufacturing method, applied in the field of electronics, can solve the problems of low light sensitivity and photocurrent, low light absorption coefficient, narrow detection range, etc., and achieve high light absorption efficiency, high absorption coefficient, high detection photocurrent and light sensitivity. Effect

Inactive Publication Date: 2017-10-24
XIDIAN UNIV
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The GeSn p-i-n type photodetector uses a new material of group IV GeSn with a narrower band gap and a higher light absorption coefficient, compared with the near-mid-infrared device of the III-V group material made in the prior art, it solves its difficult silicon-based The problem of integration can be compatible with the metal complementary oxide semiconductor CMOS (Complementary Metal Oxide Semiconductor) standard process; at the same time, compared with the shortcomings of the narrow detection range and low light absorption coefficient of Ge detectors used today, GeSn optoelectronics The detector has the advantages of wider detection wavelength and higher light absorption efficiency, but the GeSn p-i-n photodetector has the disadvantages of low light sensitivity and photocurrent
Although the GeSn avalanche diode photodetector achieves higher light sensitivity and larger photocurrent by using the photoelectron multiplication method based on the advantages of the traditional GeSn photodetector, however, the GeSn avalanche diode photodetector has the disadvantages The disadvantage is that the GeSn avalanche diode photodetector is severely affected in practical applications due to the fact that the noise is amplified and the additional noise generated during the multiplication process seriously interferes with the optical signal, and the bias voltage required to achieve the multiplication is extremely high. limits

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Phototransistor based on gesn material and fabrication method thereof
  • Phototransistor based on gesn material and fabrication method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Example 1: Making Ge 0.935 Sn 0.065 npn type phototransistor.

[0037] Step 1: Grow the collector region.

[0038] Using the low temperature solid source molecular beam epitaxy process, on the undoped (100) Ge substrate 1, at a temperature of 150°C, an undoped pure Ge material of 200 nm was epitaxially grown as a Ge buffer layer.

[0039] Epitaxy of 100nm Ge on Ge buffer layer using high purity Ge and Sn sources at 150℃ 0.935 Sn 0.065 Floor.

[0040]When the energy is 30Ke3V, the implantation dose is 10 15 cm -2 , Implant ions P(31) into the generated GeSn layer under the condition that the substrate tilt angle is 7° + , forming GeSn N + type collector region 2, such as figure 2 (a).

[0041] Step 2: Fabrication of light absorbing regions.

[0042] Using the solid source molecular beam epitaxy process, the GeSn N + Growth of 220nm Intrinsic Ge with High Purity Ge and Sn Sources at 150°C on Collector Region 2 0.935 Sn 0.065 The epitaxial layer serves as th...

Embodiment 2

[0053] Example 2: Making Ge 0.97 Sn 0.03 pnp phototransistor

[0054] Step 1: Grow the collector region.

[0055] Using the solid source molecular beam epitaxy process, on the undoped (100) Si substrate 1 at a temperature of 150° C., an undoped pure Ge material of 200 nm was epitaxially grown as a buffer layer.

[0056] Epitaxial growth of 100nm Ge at 150°C using high-purity Ge and Sn sources 0.97 Sn 0.03 .

[0057] At an energy of 30KeV and an implantation dose of 10 15 cm -2 , Implant ion BF into the GeSn layer under the condition of substrate tilt angle of 7° 2 + , forming GeSn P + type collector region 2, such as figure 2 (a).

[0058] Step 2: Fabrication of the light absorbing region.

[0059] Using the solid source molecular beam epitaxy process, the GeSn P + Epitaxial growth of 220nm intrinsic Ge at 150℃ on collector region 2 0.97 Sn 0.03 The epitaxial layer serves as the GeSn light absorption region 3, such as figure 2 (b).

[0060] Use reactive ion ...

Embodiment 3

[0070] Example 3: Making Ge 0.9 Sn 0.1 npn type phototransistor

[0071] Step A: Growing the collector region.

[0072] Using the solid source molecular beam epitaxy process, on the undoped (100) Si substrate 1 at a temperature of 150° C., an undoped pure Ge material of 200 nm was epitaxially grown as a buffer layer.

[0073] Epitaxy of 100nm Ge on the buffer layer using the same conditions 0.9 Sn 0.1 .

[0074] At an energy of 30KeV and an implantation dose of 10 15 cm -2 , Implanting ions P(31) into the GeSn layer under the condition that the chip tilt angle is 7° + Form GeSn N + type collector region 2, such as figure 2 (a).

[0075] Step B: Fabrication of light absorbing regions.

[0076] Using molecular beam epitaxy process, in GeSn N + Growth of 220nm Intrinsic Ge on Collector Region 2 at 150℃ 0.9 Sn 0.1 The epitaxial layer serves as the light absorption region 3, such as figure 2 (b).

[0077] The desired pattern is etched by reactive ion etching techn...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a photoelectric transistor based on GeSn materials and a manufacturing method thereof, aiming to solve the problem that present III-V infrared photodetectors are difficult to perform silicon-based integration and IV silicon and germanium detectors have a narrow detection range. The collector region, light absorption region, base region, and emitter region of the photoelectric transistor all employ IV GeSn alloys. A substrate, the collector region, the light absorption region, the base region, and the emitter region are successively vertically distributed, and a protective layer covers the periphery of the collector region, the light absorption region, the base region, and the emitter region. The photoelectric transistor is prepared by employing the standard CMOS (Complementary Metal Oxide Semiconductor) technique, utilizes GeSn materials having gaps and a high optical absorption coefficient, and has a wider infrared detection range compared with a Ge detector, and higher luminous sensitivity and photoelectric current.

Description

technical field [0001] The invention belongs to the field of electronic technology, and further relates to a phototransistor made of GeSn material in the field of semiconductor optoelectronic technology and a manufacturing method thereof. The invention can perform near-mid-infrared light signal detection in the field of photoelectric near-mid-infrared detection. Background technique [0002] With the rapid development of integrated circuit technology and the continuous advancement of technology, the rapid processing and transmission of large-scale information data has become the bottleneck of the development of large-scale electronic devices, and the effective integration of microelectronics technology and optoelectronic technology has become an effective way to solve this problem. [0003] Authors such as M Oehme disclosed a GeSn p-i-n photodetector in their paper "GeSn-on-Si normal incidence photodetectors with bandwidths more than 40GHz" (Optics express, vol. 22, pp. 839-...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/028H01L31/18
CPCH01L31/028H01L31/1812Y02P70/50
Inventor 韩根全王轶博张春福汪银花张进成郝跃
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com