A photodetector based on graphene planar junction

Abstract

The present invention provides a photoelectric detector based on graphene flat node, including a substrate, a metal electrode set on each ends of the surface of the substrate, which is connected to the gallery tape between the metal electrodes.The overall band is a wide bar, and one end is a narrow bar.The graphene flat -type photoelectric detector proposed by the invention uses different width graphene strips to strip the structure difference, causing the difference in the width and narrow strips of the beeck coefficient, which is based on the photoelectricity effect of the optoelectronics.The device structure and process of the present invention are simple, avoiding the complicated graphene chemical doping process, and can achieve parallel structure to improve the optical response. Based on the infrared absorption characteristics of graphene, the photoelectric detector provided by the present invention can be used for medium and far infrared infraredAnd Taihez Optoelectronics detection is a very practical photoelectric detector structure.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection and relates to a photoelectric detector based on graphene planar junctions. Background technique [0002] Graphene is an emerging two-dimensional atomic crystal material. Its ultra-wide light absorption band and ultra-fast carrier mobility, as well as its compatibility with silicon-based integrated circuit technology, make graphene materials especially suitable for photodetection. device making. At present, photodetectors based on graphene materials have made remarkable progress in broadband detection and ultrafast photodetectors. [0003] Currently, graphene-based photodetectors are mainly based on photoconductive, built-in field photovoltaic, photopyroelectric, and bolometric types (see Koppens F.H.L. et al., “Photodetectors based on graphene, other two-dimensional materials and hybrid systems”, Nature Nanotechnology, 9, 780, 2014). The photoconductive graphene photodetector m...

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Problems solved by technology

However, currently observed photothermoelectric phenomena are mainly based on monolayer-bilayer graphene interfaces (see Xu X.D. et al., “Photo-Thermoelectric Effect at a Graphene Interface Junction”, Nano Letters, 10, 562, 2010), top-gate back In complex structures such as dual-gate devices with simultaneous gate modulation (see Gabor N.M.et al., "Hot Carrier–Assisted Intrinsic Photoresponse in Graphene", Science, 4,334,2011), it is not conducive to the application and development of photodetectors

[0005] In general, the special energy band structure of graphene makes it a promising photodetector material, but the current graphene photodetector structure generally has problems such as large dark current and low efficiency. A simple process , the photothermoelectric graphene photodetector structure with practical process operability has great potential demand

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