Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Gate-level circuit simulation based key node extraction method

A gate-level circuit and key node technology, applied in the field of key node extraction of gate-level circuits, can solve the problems of high repetition rate, high algorithm complexity, large search space, etc., to speed up the recovery process, improve search efficiency, avoid The effect of repeated recovery

Active Publication Date: 2016-09-21
XIDIAN UNIV
View PDF1 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Since the extraction of traditional key nodes takes a single DFF node as the analysis object, by analyzing each node and its adjacent circuits, on the one hand, the search space is large, and there may even be some redundant searches, which leads to the algorithm The complexity is too high and the search efficiency is low; on the other hand, it does not consider the situation that multiple D flip-flop DFF nodes jointly restore the node state, resulting in inaccurate range of restored node state or high repetition rate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Gate-level circuit simulation based key node extraction method
  • Gate-level circuit simulation based key node extraction method
  • Gate-level circuit simulation based key node extraction method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] In order to make the object, technical solution and advantages of the present invention more clear, the present invention will be further described in detail below with reference to the accompanying drawings and examples.

[0027] refer to figure 1 , the gate-level circuit targeted by the present invention includes 4 external input terminals G0, G1, G2, G3, 6 D flip-flops DFF nodes DFFG4, DFFG5, DFFG6, DFFG7, DFFG8, DFFG9, 3 NOT gates NOT nodes NOTG15, NOTG16, NOTG20, 1 AND node ANDG19, 2 OR nodes ORG17, ORG18, 4 NOR nodes NORG11, NORG12, NORG13, NORG14, 1 NAND node NANDG10 and 2 external outputs G21 , G22.

[0028] refer to figure 2 , the present invention is based on the key node extraction method of gate-level circuit simulation, comprises the following steps:

[0029] Step 1: Obtain the connection relationship of nodes in the gate-level circuit, and obtain the internal connection relationship of the gate-level circuit.

[0030] (1a) storing the gate-level circu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention discloses a gate-level circuit simulation based key node extraction method. The method mainly solves the problems of low searching efficiency, inaccurate node state range restoration and an excessively high duplication rate in the prior art. The method comprises: acquiring a connection relationship of a gate-level circuit; by simulating the gate-level circuit, generating a state of a corresponding gate-level node, and calculating a ratio of states of key nodes 0 and 1; extracting a frequent subcircuit of the gate-level circuit; restoring, by D flip-flop DFF nodes extracted from the frequent subcircuit, a node of the gate-level circuit; in combination with the number of the node restored by the D flip-flop DFF nodes and the ratio of the states of 0 and 1, calculation weighted values, and extracting the D flip-flop DFF node with the greatest weighted value; and on the basis of the extracted D flip-flop DFF nodes, sequentially extracting subsequent key nodes. By use of the method disclosed by the present invention, the duplication rate of the the restored node is decreased, the searching efficiency is increased, the state range of the node stored by the key nodes is expanded, and the method can be used for error detection of the gate-level circuit, and tracking of internal signals is realized.

Description

technical field [0001] The invention belongs to the technical field of circuit processing, and in particular relates to a method for extracting key nodes of a gate-level circuit, which can be used to detect errors existing in the gate-level circuit and realize tracking of internal signals. Background technique [0002] With the continuous improvement of chip scale and complexity, it takes too long to verify the correctness of the chip only by pre-silicon verification technologies such as simulation or formal verification, and it cannot fully guarantee the correctness of the first tape-out. In order to eliminate errors that cannot be found in the pre-silicon verification stage before the chip is released to the market, silicon debugging after the first tape-out is very necessary. [0003] Silicon debugging technology is divided into two technologies based on the scan chain and based on the trace signal. The scan chain-based silicon debugging technology mainly captures the st...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/30G06F17/50H03K19/20
CPCG06F16/00G06F30/34H03K19/20
Inventor 潘伟涛周俊邱智亮高丽丽刁卓陈珊珊
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products